Low-temperature Cu-to-Cu direct bonding enabled by highly (111)- oriented and nanotwinned Cu

Chih Chen, J. Juang, S. Chang, K. Shie, Yu Jin Li, K. Tu
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引用次数: 0

Abstract

In this study, a low temperature diffusion bonding enabled by (111) highly oriented nanotwinned Cu (nt-Cu) was proposed. Two different bonding atmospheres, one is in low vacuum bonding, and another is in N2 bonding were carried out. Both of the two bonding atmospheres show good bonding interfaces after microstructure observation. For vacuum ambient, large-grained structure was found after 250°C for 90 min at 1 MPa in vacuum bonding. The size was as large as 40 μm in width and 10 μm in height. For non-vacuum conditions, the nt-Cu bumps can be bonded to nt-Cu films at the 250°C for 20 min under 40.6 MPa. Accordingly, it is believed that low temperature bonding in low vacuum or non-vacuum ambients can be accomplished by using highly (111)-oriented nt-Cu.
高(111)取向和纳米孪晶Cu实现了低温Cu- Cu直接键合
在这项研究中,提出了一种低温扩散键的(111)高取向纳米孪晶Cu (nt-Cu)。研究了两种不同的成键气氛,一种是低真空成键,另一种是氮气成键。微观结构观察表明,两种结合气氛均表现出良好的结合界面。在真空环境下,在250°C、90 min、1mpa的真空条件下,发现了大晶粒组织。尺寸为宽40 μm,高10 μm。在非真空条件下,在40.6 MPa、250°C、20 min的温度下,nt-Cu凸点可以与nt-Cu薄膜结合。因此,认为在低真空或非真空环境下,可以通过使用高(111)取向的nt-Cu来实现低温键合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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