Oxidation of Bonded Thin Ti Films Using Oxide Underlayers in Atomic Diffusion Bonding Process for Optical Applications

2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2019-05-01 DOI:10.23919/LTB-3D.2019.8735120

G. Yonezawa, Y. Sato, S. Abe, M. Uomoto, T. Shimatsu

引用次数: 1

Abstract

Structural analyses revealed Ti film thickness at the bonded interface as more than twice that of the original thickness, with enhanced Ti oxide formation with oxygen dissociated from oxide underlayers. This process provides an interface with 100% light transmittance.

查看原文本刊更多论文

光学应用中原子扩散键合过程中使用氧化物衬底氧化钛薄膜

结构分析表明，结合界面处的Ti膜厚度是原始厚度的两倍以上，氧化钛的形成随着氧从氧化下层解离而增强。该工艺提供了100%透光率的接口。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

自引率

0.00%

发文量