功率器件用金刚石/铜直接键合的制备

2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2019-01-25 DOI:10.23919/LTB-3D.2019.8735136

Shinji Kanda, Satoshi Masuya, M. Kasu, N. Shigekawa, Jianbo Liang

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引用次数: 1

摘要

采用表面活化键合方法成功地制备了金刚石与Cu的直接键合。获得了金刚石与铜几乎完全接触的面积。在原位退火条件下，利用透射电镜研究了退火温度对键合界面结构性能的影响。

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Fabrication of Diamond/Cu Direct Bonding for Power Device Application

Direct bonding of diamond and Cu is successfully fabricated by surface activated bonding method. An almost full contact area of diamond and Cu is obtained. The effect of annealing temperature on the structure properties of the bonding interface is investigated under in-situ annealing in a transmission electron microscope (TEM).

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来源期刊

2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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