室温下Ar原子辐照对表面活化键合制备的GaAs/Si界面结晶度的影响

2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2019-05-21 DOI:10.23919/LTB-3D.2019.8735300

Y. Ohno, Reina Miyagawa, H. Yoshida, S. Takeda, Jianbo Liang, N. Shigekawa

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摘要

砷(As)空位在被Ar原子辐照的GaAs表面下被引入，而砷(As)间隙在更深的区域被共同引入。673 K退火后，As空位通过As间隙的迁移与As间隙重新结合而消失。

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Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature

Arsenic (As) vacancies are introduced beneath the GaAs surfaces irradiated by Ar atoms for surface activation, while As interstitials are co-introduced at deeper regions. After 673 K annealing, As vacancies disappear by the recombination with As interstitials, via the migration of As interstitials.

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2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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