O离子束通过中间原子层沉积Al2O3层的室温GaN-Si键合

2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2019-05-21 DOI:10.23919/LTB-3D.2019.8735103

Xinhua Wang, Shengli Zhu, Binbin Jiao, Sen Huang, K. Wei, H. Yin, Jie Fan, Xinyu Liu

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引用次数: 1

摘要

利用O等离子体通过中间原子层沉积Al2O3层实现了gan与si的室温键合。在4英寸晶圆上实现了80%的键合面积比率。粘接区域均匀，无明显的裂纹和空洞，能承受切片机的切削力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Room Temperature GaN-Si Bonding via an Intermediate Atomic-Layer-Deposition Al2O3 Layer by Using O Ion Beam

A room temperature GaN-to-Si bonding was performed via an intermediate Atomic-Layer-Deposition Al2O3 layer by using O plasma. The ratio of bonded area of 80% was achieved for a 4-inch wafer. The bonded area was uniform without distinguishable cracks or voids, and can bear the cutting force from the wafer scriber.

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来源期刊

2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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