Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature

Abstract

Arsenic (As) vacancies are introduced beneath the GaAs surfaces irradiated by Ar atoms for surface activation, while As interstitials are co-introduced at deeper regions. After 673 K annealing, As vacancies disappear by the recombination with As interstitials, via the migration of As interstitials.