Novel Sputter Film Deposition to Fabricate Thick Films with Extremely Smooth Surface Suitable for Room Temperature Bonding

2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2019-11-27 DOI:10.23919/LTB-3D.2019.8735262

T. Saito, H. Makita, T. Moriwaki, Y. Suzuki, N. Kato, S. Wakayanagi, A. Miura, M. Uomoto, T. Shimatsu

引用次数: 1

Abstract

SiO2 films were deposited on glass wafers using energy treatment sputtering (ETS). Surface roughness Sa of ETS-SiO2 film was 0.17 nm, which is remarkably smaller than that of films deposited using conventional sputtering (Sa=0.46 nm). Bonding using the extremely smooth surface was demonstrated.

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新型溅射膜沉积制备表面非常光滑的厚膜，适合于室温键合

采用能量处理溅射(ETS)技术在玻璃晶圆上沉积SiO2薄膜。ETS-SiO2薄膜的表面粗糙度Sa为0.17 nm，明显小于传统溅射法沉积的薄膜(Sa=0.46 nm)。证明了使用极其光滑的表面进行键合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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