表面活化键合制备砷化镓同质界面的原子探针层析成像

2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2019-05-21 DOI:10.23919/LTB-3D.2019.8735167

Y. Shimizu, N. Ebisawa, Y. Ohno, Jianbo Liang, N. Shigekawa, K. Inoue, Y. Nagai

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引用次数: 1

摘要

用原子探针层析成像(APT)研究了表面活化键合(SAB)制备的砷化镓同质界面周围元素的分布。我们的APT检测到少量意外引入SAB界面的污染物。我们证实，在键合界面处，通过键合后退火恢复了缺砷中间层。

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Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding

Elemental distribution around GaAs homointerfaces fabricated by surface-activated bonding (SAB) is examined by atom probe tomography (APT). Our APT detected small amount of contaminants accidentally introduced on the SAB interfaces. We confirmed that As-deficient intermediate layer at the as-bonded interfaces was recovered by post-bonding annealing.

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来源期刊

2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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