Pre-bonding Characterization of SiCN Enabled Wafer Stacking

Abstract

We present recent study in pre-bonding characterizations for SiCN-to-SiCN wafer stacking. An alternative approach is evaluated to quantify surface hydroxyl density on SiCN after plasma activation by HfO2 deposition. In addition, in-depth analysis of plasma activation effects is employed prior to bonding by means of TEM. The characterization results complement the post-bonding behavior of SiCN dielectric which deviates from conventional SiO2-SiO2 bonding.