International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.最新文献_第2页

Simulation of number of pulses to breakdown during TLP for ESD testing 用于ESD测试的TLP中击穿脉冲数的仿真

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233654

K. Matsuzawa, H. Satake, C. Sutou, H. Kawashima

引用次数: 6

Physical compact model for threshold voltage in short-channel double-gate devices 短通道双栅器件阈值电压的物理紧凑模型

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233677

Keunwoo Kim, J. Fossum, C. Chuang

引用次数: 22

Calibration of hole scattering rates in silicon with a large set of experimental data including high voltage quantum yield, drain disturb and substrate hole injection 用高电压量子产率、漏极干扰和衬底空穴注入等大量实验数据校准硅中的空穴散射率

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233640

A. Ghetti

引用次数: 3

Atomistic modeling of B activation and deactivation for ultra-shallow junction formation 超浅结形成中B活化和失活的原子模型

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233659

M. Aboy, L. Pelaz, L. Marqués, J. Barbolla, A. Mokhberi, Y. Takamura, P. Griffin, J. Plummer

{"title":"Atomistic modeling of B activation and deactivation for ultra-shallow junction formation","authors":"M. Aboy, L. Pelaz, L. Marqués, J. Barbolla, A. Mokhberi, Y. Takamura, P. Griffin, J. Plummer","doi":"10.1109/SISPAD.2003.1233659","DOIUrl":"https://doi.org/10.1109/SISPAD.2003.1233659","url":null,"abstract":"We have investigated the physical mechanisms for the B clustering formation and dissolution for ultra-shallow junction formation. We have analyzed high-dose low-energy B implants and theoretical structures with box-shaped B profiles that are fully active. These structures could be simplifications of the situation resulting from regrowth of preamorphized or laser annealed B implants. For these conditions, we have to take into account new effects due to the high B concentration and the proximity to the surface. The simulations show that the deactivation mechanism for B implants in crystalline Si takes place through a high interstitial content path, and it happens even for low B doses. The deactivation of the B box depends on the B concentration. In the absence of excess Si interstitials, B deactivation only happens for very high B concentrations. This process is very slow for low temperature anneals. If there is a residual concentration of Si interstitials along with the B box, the deactivation will take place rapidly even at low temperatures. In the model, the reactivation mechanism takes place in all cases through the low interstitial content path, by the capture of native Si interstitial defects and the emission of B interstitials.","PeriodicalId":220325,"journal":{"name":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128666065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Reformulation of macroscopic transport models based on the moments of the scattering integral [semiconductor device modeling applications] 基于散射积分矩的宏观输运模型的重新表述[半导体器件建模应用]

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233638

T. Grasser, H. Kosina, S. Selberherr

引用次数: 4

Mobility modeling in presence of quantum effects 量子效应下的迁移率建模

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233689

K. Dragosits, V. Palankovski, S. Selberherr

引用次数: 2

Integrated multiscale multistep process simulation 集成多尺度多步骤过程模拟

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233698

Y. Im, M. Bloomfield, C. Sukam, John A. Tichy, T. Cale, J. Seok

引用次数: 1

On the inclusion of floating domains in electromagnetic field solvers 电磁场求解器中浮动域的包含

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233651

W. Schoenmaker, P. Meuris

引用次数: 0

Simulation of noise characteristics caused by discretized traps in MOSFETs mosfet中离散陷阱噪声特性的仿真

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233643

K. Matsuzawa, T. Ohguro, N. Aoki

引用次数: 2

A multistage smoothing algorithm for coupling cellular and polygonal datastructures 耦合元胞和多边形数据结构的多阶段平滑算法

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233686

A. Hossinger, J. Červenka, S. Selberherr

引用次数: 0