Integrated multiscale multistep process simulation

Y. Im, M. Bloomfield, C. Sukam, John A. Tichy, T. Cale, J. Seok
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引用次数: 1

Abstract

We discuss the integration of process simulations for several process steps in the fabrication of a simple Damascene structure. Starting with a blanket silicon dioxide substrate and a patterned mask, we perform simulations of plasma etching, PVD barrier deposition, PVD seed layer deposition, electrochemical deposition of copper using an additive-containing bath, and chemical mechanical polishing. This virtual process sequence demonstrates the use of process simulation to study not just individual process steps, but process flows. After using 2d features and 3d/2d simulations to calibrate models for a particular process, we present samples of fully 3d/3d simulations to show possible approaches to answering questions that cannot be addressed by 2D simulators, such as deposition into dual Damascene structure and the plasma etching of porous materials.
集成多尺度多步骤过程模拟
我们讨论了在制造一个简单的大马士革结构的几个工艺步骤的过程模拟的集成。从覆盖式二氧化硅衬底和图案掩膜开始,我们模拟了等离子蚀刻、PVD势垒沉积、PVD种子层沉积、使用含添加剂浴池的铜电化学沉积和化学机械抛光。这个虚拟流程序列演示了流程模拟的使用,不仅可以研究单个流程步骤,还可以研究流程流。在使用2d特征和3d/2d模拟来校准特定过程的模型之后,我们展示了完全3d/3d模拟的样本,以展示可能的方法来回答2d模拟器无法解决的问题,例如沉积到双Damascene结构和多孔材料的等离子体蚀刻。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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