发布求助
文献互助 智能选刊 最新文献

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.最新文献

筛选
英文 中文
Modeling gate leakage in InAs/AlSb HEMTs InAs/AlSb hemt的栅极泄漏建模
International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233695
M. Ancona, J. B. Boos, N. Papanicolaou, W. Chang, B. R. Bennett, D. Park
{"title":"Modeling gate leakage in InAs/AlSb HEMTs","authors":"M. Ancona, J. B. Boos, N. Papanicolaou, W. Chang, B. R. Bennett, D. Park","doi":"10.1109/SISPAD.2003.1233695","DOIUrl":"https://doi.org/10.1109/SISPAD.2003.1233695","url":null,"abstract":"To simulate gate leakage in InAs/AlSb HEMTs, we create a detailed model within the framework of density gradient theory that incorporates the entire InAs/AlSb heterostructure, the quantum confinement and non-parabolicity effects in the InAs well and generation/recombination at the Type II InAs/AlSb heterojunction (via both the spatially indirect hand-to-hand process and interface traps). Each of these ingredients is described individually and they are then put together as a model of gate leakage. Comparisons of preliminary leakage simulations with experiment suggest that interface traps are essential for understanding the behavior especially at low voltages.","PeriodicalId":220325,"journal":{"name":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125141159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theory and design of field-effect carbon nanotube transistors 场效应碳纳米管晶体管的理论与设计
International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233663
G. Pennington, N. Goldsman
{"title":"Theory and design of field-effect carbon nanotube transistors","authors":"G. Pennington, N. Goldsman","doi":"10.1109/SISPAD.2003.1233663","DOIUrl":"https://doi.org/10.1109/SISPAD.2003.1233663","url":null,"abstract":"In this work we study the effects of the application of an electric field perpendicular to the axis of a Carbon nanotube. We find that such a field acts to lower the bandgap and alter the wavefunctions around the circumference of the tube. We simulate the quantum transport properties of a resonant-tunneling FET as an application of these effects using the Wigner-function formalism. The results of our theoretical model indicate that the current in this device can be effectively manipulated by the gate potential.","PeriodicalId":220325,"journal":{"name":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125907532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Modeling the effect of source/drain sidewall spacer process on boron ultra shallow junctions 源/漏侧壁隔层工艺对硼超浅结影响的模拟
International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233661
S. Chakravarthi, P. Kohli, P. Chidambaram, H. Bu, A. Jain, B. Hornung, C. Machala
{"title":"Modeling the effect of source/drain sidewall spacer process on boron ultra shallow junctions","authors":"S. Chakravarthi, P. Kohli, P. Chidambaram, H. Bu, A. Jain, B. Hornung, C. Machala","doi":"10.1109/SISPAD.2003.1233661","DOIUrl":"https://doi.org/10.1109/SISPAD.2003.1233661","url":null,"abstract":"A novel model is developed to explain the effect of the source/drain sidewall spacer process on boron drain extension formation. A diffusion model for hydrogen in the source/drain sidewall spacer is developed and combined with a model for boron diffusion in oxides. The model is first calibrated to hydrogen out-diffusion data from Nuclear Reaction Analysis (NRA) and then to boron diffusion data from Secondary Ion Mass Spectroscopy (SIMS). Seemingly anomalous changes in boron junction depths with variation in sidewall spacer deposition conditions are explained by this model. The model is applied to TCAD process/device simulations to understand the effect of sidewall spacer on CMOS device performance.","PeriodicalId":220325,"journal":{"name":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115198096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Investigation of the detailed structure of atomically sharp Ge/SiO/sub 2/ interfaces 原子尖锐Ge/SiO/ sub2 /界面详细结构的研究
International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233657
T. Liang, W. Windl, S. Lopatin, G. Duscher
{"title":"Investigation of the detailed structure of atomically sharp Ge/SiO/sub 2/ interfaces","authors":"T. Liang, W. Windl, S. Lopatin, G. Duscher","doi":"10.1109/SISPAD.2003.1233657","DOIUrl":"https://doi.org/10.1109/SISPAD.2003.1233657","url":null,"abstract":"The atomic structure of the interface between Ge and SiO/sub 2/ - fabricated by oxidation of Ge-implanted Si - was studied using a combination of density-functional and kinetic-Monte Carlo simulations with atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy with an experimental resolution close to the quantum-mechanical limit. The combination of experimental and theoretical results is consistent with the model of an atomically abrupt Ge/SiO/sub 2/ interface with probably small fractions of Ge in the oxide.","PeriodicalId":220325,"journal":{"name":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129721524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Simulation of surface engineering for ultra shallow junction formation of PMOS for the 90nm CMOS technology node and beyond 基于90nm及以上CMOS技术节点的PMOS超浅结形成表面工程模拟
International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233660
J. Bonnouvrier, D. Lenoble, E. Robilliart, T. Schwartzmann, H. Jaouen
{"title":"Simulation of surface engineering for ultra shallow junction formation of PMOS for the 90nm CMOS technology node and beyond","authors":"J. Bonnouvrier, D. Lenoble, E. Robilliart, T. Schwartzmann, H. Jaouen","doi":"10.1109/SISPAD.2003.1233660","DOIUrl":"https://doi.org/10.1109/SISPAD.2003.1233660","url":null,"abstract":"Since the junctions in the most advanced CMOS devices are thinner and thinner, the influence of the surface of silicon is thus becoming significant on dopant diffusion. In this paper, based on experimental data, a methodology for calibration is proposed, taking this effect of surface into account. SIMS profiles are accurately fitted by simulation using a simple model of recombination of interstitials; the phenomenon of POED is well reproduced and validated by TCAD ID simulations. Then, the impact of POED on the PMOS performances is quantified by anticipation with 2D TCAD simulations.","PeriodicalId":220325,"journal":{"name":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123810000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Oxide breakdown model and its impact on SRAM cell functionality 氧化物分解模型及其对SRAM电池功能的影响
International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233692
R. Rodríguez, R. Joshi, J. Stathis, C. Chuang
{"title":"Oxide breakdown model and its impact on SRAM cell functionality","authors":"R. Rodríguez, R. Joshi, J. Stathis, C. Chuang","doi":"10.1109/SISPAD.2003.1233692","DOIUrl":"https://doi.org/10.1109/SISPAD.2003.1233692","url":null,"abstract":"The influence of the oxide hard breakdown (HBD) in an SRAM cell on the performance of a circuit that includes the cell, together with the bit select circuit and sense amplifier for the read and write process of the cell, have been analyzed. The analysis of the impact of oxide HBD on this circuit has been performed through the variation of different parameters as the bitline differential voltage and the read and write delays of the cell for different levels of oxide HBD damage in the cell. The results show that oxide BD between gate and source of the NFETs of the SRAM cell seems to have more influence in the circuit performance than in other cell positions.","PeriodicalId":220325,"journal":{"name":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131432535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 35
Photoresist flow simulation using the viscous flow model 利用粘性流动模型进行光刻胶流动模拟
International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233633
Won-young Chung, Tai-kyung Kim, Young-tae Kim, Byung-joon Hwang, Young-Kwan Park, J. Kong
{"title":"Photoresist flow simulation using the viscous flow model","authors":"Won-young Chung, Tai-kyung Kim, Young-tae Kim, Byung-joon Hwang, Young-Kwan Park, J. Kong","doi":"10.1109/SISPAD.2003.1233633","DOIUrl":"https://doi.org/10.1109/SISPAD.2003.1233633","url":null,"abstract":"The PR (photoresist) flow process, applied to contact patterning, is difficult to predict and optimize because a process model does not exist. In this paper, the PR flow simulation method, using a viscous flow model, is developed and applied to examine the effect of initial shape and process conditions on the PR flow phenomena. In addition, this model is used to optimize the layout with the various contacts in the real pattern. This PR flow model, linked to lithography and etch ones, can predict and optimize the contact patterning process in cell, periphery, and TEG (test element group) areas and analyze defects, considering the pre-/post-processes, systematically.","PeriodicalId":220325,"journal":{"name":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132348578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Random dopant fluctuation modelling with the impedance field method 阻抗场法随机掺杂波动建模
International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233645
A. Wettstein, O. Penzin, Eugeny Lyumkis, Wolfgang Fichtner
{"title":"Random dopant fluctuation modelling with the impedance field method","authors":"A. Wettstein, O. Penzin, Eugeny Lyumkis, Wolfgang Fichtner","doi":"10.1109/SISPAD.2003.1233645","DOIUrl":"https://doi.org/10.1109/SISPAD.2003.1233645","url":null,"abstract":"We discuss an approach for the modelling of random dopant fluctuations based on the impedance field method that has been recently integrated into DESSIS. The method is easy to use and orders of magnitudes more efficient than the statistical method.","PeriodicalId":220325,"journal":{"name":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130052404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 57
Resonance quantum switch: search of working parameters 共振量子开关:工作参数搜索
International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233690
N. Bagraev, B. Pavlov, A. Yafyasov
{"title":"Resonance quantum switch: search of working parameters","authors":"N. Bagraev, B. Pavlov, A. Yafyasov","doi":"10.1109/SISPAD.2003.1233690","DOIUrl":"https://doi.org/10.1109/SISPAD.2003.1233690","url":null,"abstract":"Design of a three-terminal Quantum Switch is suggested in form of a network consisting of a circular quantum well and a four quantum wires attached to it. The conditions of functioning are defined in dependence of the desired working temperature, Fermi level and effective mass of an electron. The speed of switching is estimated.","PeriodicalId":220325,"journal":{"name":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130735863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Error estimated driven anisotropic mesh refinement for three-dimensional diffusion simulation 三维扩散模拟的误差估计驱动各向异性网格细化
International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI: 10.1109/SISPAD.2003.1233649
W. Wessner, C. Heitzinger, A. Hossinger, S. Selberherr
{"title":"Error estimated driven anisotropic mesh refinement for three-dimensional diffusion simulation","authors":"W. Wessner, C. Heitzinger, A. Hossinger, S. Selberherr","doi":"10.1109/SISPAD.2003.1233649","DOIUrl":"https://doi.org/10.1109/SISPAD.2003.1233649","url":null,"abstract":"We present a computational method for locally adapted conformal anisotropic tetrahedral mesh refinement. The element size is determined by an anisotropy function which is governed by an error estimation driven ruler according to an adjustable maximum error. Anisotropic structures are taken into account to reduce the amount of elements compared to strict isotropic refinement. The spatial resolution in three-dimensional unstructured tetrahedral meshes for diffusion simulation can be dynamically increased.","PeriodicalId":220325,"journal":{"name":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132942031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信