A. Wettstein, O. Penzin, Eugeny Lyumkis, Wolfgang Fichtner
{"title":"阻抗场法随机掺杂波动建模","authors":"A. Wettstein, O. Penzin, Eugeny Lyumkis, Wolfgang Fichtner","doi":"10.1109/SISPAD.2003.1233645","DOIUrl":null,"url":null,"abstract":"We discuss an approach for the modelling of random dopant fluctuations based on the impedance field method that has been recently integrated into DESSIS. The method is easy to use and orders of magnitudes more efficient than the statistical method.","PeriodicalId":220325,"journal":{"name":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"57","resultStr":"{\"title\":\"Random dopant fluctuation modelling with the impedance field method\",\"authors\":\"A. Wettstein, O. Penzin, Eugeny Lyumkis, Wolfgang Fichtner\",\"doi\":\"10.1109/SISPAD.2003.1233645\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We discuss an approach for the modelling of random dopant fluctuations based on the impedance field method that has been recently integrated into DESSIS. The method is easy to use and orders of magnitudes more efficient than the statistical method.\",\"PeriodicalId\":220325,\"journal\":{\"name\":\"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"57\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2003.1233645\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2003.1233645","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Random dopant fluctuation modelling with the impedance field method
We discuss an approach for the modelling of random dopant fluctuations based on the impedance field method that has been recently integrated into DESSIS. The method is easy to use and orders of magnitudes more efficient than the statistical method.