Theory and design of field-effect carbon nanotube transistors

Abstract

In this work we study the effects of the application of an electric field perpendicular to the axis of a Carbon nanotube. We find that such a field acts to lower the bandgap and alter the wavefunctions around the circumference of the tube. We simulate the quantum transport properties of a resonant-tunneling FET as an application of these effects using the Wigner-function formalism. The results of our theoretical model indicate that the current in this device can be effectively manipulated by the gate potential.