原子尖锐Ge/SiO/ sub2 /界面详细结构的研究

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI:10.1109/SISPAD.2003.1233657

T. Liang, W. Windl, S. Lopatin, G. Duscher

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引用次数: 3

摘要

采用密度泛函数和动力学蒙特卡罗模拟相结合的方法，结合原子分辨率z对比成像和接近量子力学极限分辨率的电子能量损失谱，研究了Ge注入Si -氧化制备的Ge与SiO/sub - 2/ -界面的原子结构。实验和理论结果的结合符合原子突变的Ge/SiO/sub - 2/界面模型，其中可能含有少量的Ge。

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Investigation of the detailed structure of atomically sharp Ge/SiO/sub 2/ interfaces

The atomic structure of the interface between Ge and SiO/sub 2/ - fabricated by oxidation of Ge-implanted Si - was studied using a combination of density-functional and kinetic-Monte Carlo simulations with atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy with an experimental resolution close to the quantum-mechanical limit. The combination of experimental and theoretical results is consistent with the model of an atomically abrupt Ge/SiO/sub 2/ interface with probably small fractions of Ge in the oxide.

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来源期刊

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.

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