利用粘性流动模型进行光刻胶流动模拟

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI:10.1109/SISPAD.2003.1233633

Won-young Chung, Tai-kyung Kim, Young-tae Kim, Byung-joon Hwang, Young-Kwan Park, J. Kong

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引用次数: 2

摘要

PR(光刻胶)流动过程，应用于接触图案，是难以预测和优化的，因为一个过程模型不存在。本文提出了一种基于粘性流动模型的PR流动模拟方法，并应用该方法研究了初始形状和工艺条件对PR流动现象的影响。此外，还利用该模型对实际模式中各种触点的布局进行了优化。该PR流模型与光刻和蚀刻模型相关联，可以预测和优化单元、外围和TEG(测试元件组)区域的接触图图化过程，并系统地考虑前/后过程，分析缺陷。

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Photoresist flow simulation using the viscous flow model

The PR (photoresist) flow process, applied to contact patterning, is difficult to predict and optimize because a process model does not exist. In this paper, the PR flow simulation method, using a viscous flow model, is developed and applied to examine the effect of initial shape and process conditions on the PR flow phenomena. In addition, this model is used to optimize the layout with the various contacts in the real pattern. This PR flow model, linked to lithography and etch ones, can predict and optimize the contact patterning process in cell, periphery, and TEG (test element group) areas and analyze defects, considering the pre-/post-processes, systematically.

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International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.

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