Modeling gate leakage in InAs/AlSb HEMTs

Abstract

To simulate gate leakage in InAs/AlSb HEMTs, we create a detailed model within the framework of density gradient theory that incorporates the entire InAs/AlSb heterostructure, the quantum confinement and non-parabolicity effects in the InAs well and generation/recombination at the Type II InAs/AlSb heterojunction (via both the spatially indirect hand-to-hand process and interface traps). Each of these ingredients is described individually and they are then put together as a model of gate leakage. Comparisons of preliminary leakage simulations with experiment suggest that interface traps are essential for understanding the behavior especially at low voltages.