Random dopant fluctuation modelling with the impedance field method

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI:10.1109/SISPAD.2003.1233645

A. Wettstein, O. Penzin, Eugeny Lyumkis, Wolfgang Fichtner

引用次数: 57

Abstract

We discuss an approach for the modelling of random dopant fluctuations based on the impedance field method that has been recently integrated into DESSIS. The method is easy to use and orders of magnitudes more efficient than the statistical method.

查看原文本刊更多论文

阻抗场法随机掺杂波动建模

我们讨论了一种基于阻抗场方法的随机掺杂波动建模方法，该方法最近已集成到DESSIS中。该方法易于使用，比统计方法效率高几个数量级。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.

自引率

0.00%

发文量