mosfet中离散陷阱噪声特性的仿真

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI:10.1109/SISPAD.2003.1233643

K. Matsuzawa, T. Ohguro, N. Aoki

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引用次数: 2

摘要

研究了按比例缩小的mosfet栅极绝缘子中离散陷阱引起的闪烁噪声的仿真方法。在器件模拟器中实现了用于统计计算的解析方法和用于解释噪声源影响的部分蒙特卡罗方法。分析方法成功地再现了在测量噪声特性中观察到的波动。利用部分蒙特卡罗方法阐明了载流子和迁移率波动的作用。

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Simulation of noise characteristics caused by discretized traps in MOSFETs

Simulation methods for the flicker noise caused by discretized traps in gate insulators of scaled-down MOSFETs were studied. An analytical approach for statistical calculation and a partial Monte Carlo method for interpreting the effects of the noise sources were implemented in a device simulator. The analytical method successfully reproduced the fluctuations observed in the measured noise characteristics. The partial Monte Carlo method was used to clarify the roles of the carrier and mobility fluctuations.

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来源期刊

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.

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