{"title":"基于散射积分矩的宏观输运模型的重新表述[半导体器件建模应用]","authors":"T. Grasser, H. Kosina, S. Selberherr","doi":"10.1109/SISPAD.2003.1233638","DOIUrl":null,"url":null,"abstract":"We present a formulation of non-parabolic macroscopic transport models which avoids the commonly used relaxation time approximation by using an expansion of the scattering integral into the odd moments of the distribution function. The parameters of this expansion and the other closure relations are directly calculated via analytical models of the distribution function. We compare models of order four and six to demonstrate the substantially improved accuracy of the six moments description over the conventional four moments energy-transport formalism.","PeriodicalId":220325,"journal":{"name":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Reformulation of macroscopic transport models based on the moments of the scattering integral [semiconductor device modeling applications]\",\"authors\":\"T. Grasser, H. Kosina, S. Selberherr\",\"doi\":\"10.1109/SISPAD.2003.1233638\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a formulation of non-parabolic macroscopic transport models which avoids the commonly used relaxation time approximation by using an expansion of the scattering integral into the odd moments of the distribution function. The parameters of this expansion and the other closure relations are directly calculated via analytical models of the distribution function. We compare models of order four and six to demonstrate the substantially improved accuracy of the six moments description over the conventional four moments energy-transport formalism.\",\"PeriodicalId\":220325,\"journal\":{\"name\":\"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.\",\"volume\":\"70 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2003.1233638\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2003.1233638","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reformulation of macroscopic transport models based on the moments of the scattering integral [semiconductor device modeling applications]
We present a formulation of non-parabolic macroscopic transport models which avoids the commonly used relaxation time approximation by using an expansion of the scattering integral into the odd moments of the distribution function. The parameters of this expansion and the other closure relations are directly calculated via analytical models of the distribution function. We compare models of order four and six to demonstrate the substantially improved accuracy of the six moments description over the conventional four moments energy-transport formalism.