Reformulation of macroscopic transport models based on the moments of the scattering integral [semiconductor device modeling applications]

T. Grasser, H. Kosina, S. Selberherr
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引用次数: 4

Abstract

We present a formulation of non-parabolic macroscopic transport models which avoids the commonly used relaxation time approximation by using an expansion of the scattering integral into the odd moments of the distribution function. The parameters of this expansion and the other closure relations are directly calculated via analytical models of the distribution function. We compare models of order four and six to demonstrate the substantially improved accuracy of the six moments description over the conventional four moments energy-transport formalism.
基于散射积分矩的宏观输运模型的重新表述[半导体器件建模应用]
我们提出了一种非抛物型宏观输运模型的公式,通过将散射积分展开为分布函数的奇矩,避免了常用的松弛时间近似。通过分布函数的解析模型直接计算该展开式的参数和其他闭合关系。我们比较了四阶和六阶模型,以证明六阶矩描述比传统的四阶矩能量输运形式主义的准确性大大提高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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