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2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)最新文献

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The Aerospace Corporation’s Compendium of Recent Radiation Testing Results 航空航天公司最近的辐射测试结果汇编
2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Pub Date : 2022-07-01 DOI: 10.1109/REDW56037.2022.9921435
S. Davis, A. Yarbrough, R. Koga, A. Wright, J. Shanney, C. Cao, K. Pham, S. Lin, B. Dooley
{"title":"The Aerospace Corporation’s Compendium of Recent Radiation Testing Results","authors":"S. Davis, A. Yarbrough, R. Koga, A. Wright, J. Shanney, C. Cao, K. Pham, S. Lin, B. Dooley","doi":"10.1109/REDW56037.2022.9921435","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921435","url":null,"abstract":"Radiation testing was performed on several commercial components to determine the response of these components to the space radiation environment. Testing was performed using protons and heavy ions.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130300486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Accelerated Nuclear Radiation Effects on the Raspberry Pi 3B+ 加速核辐射对树莓派3B+的影响
2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Pub Date : 2022-07-01 DOI: 10.1109/REDW56037.2022.9921475
C. Corley, H. Quinn, E. Swartzlander
{"title":"Accelerated Nuclear Radiation Effects on the Raspberry Pi 3B+","authors":"C. Corley, H. Quinn, E. Swartzlander","doi":"10.1109/REDW56037.2022.9921475","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921475","url":null,"abstract":"The Raspberry Pi family of hobbyist, single-board computers are appearing in avionics and space applications - despite not being designed for a radiation environment. Therefore, results of radiation testing are of interest to the radiation community. In this paper, we report results of executing a suite of benchmarks on the Raspberry Pi 3B+ with its ARM Cortex-A53 microprocessor in the accelerated neutron beam at LANSCE during August 2021. The entire 56x85 mm board was exposed while running Linux. Single Event Upsets, Single Event Functional Interrupts, HANGS, and Linux operating system errors were recorded along with the attendant neutron fluence. Cross sections are computed and converted to error rates. Due to frequent crashes, tests were run for one minute then terminated and a new test begun. Unsuccessful tests were detected, and power was cycled to recover initial system state. While the Linux operating system afforded several advantages in testing, it introduces difficult-to-diagnose failures and a perplexing problem on Raspberry Pi with accounting for wall-clock time.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134608148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits 12LP FinFET数字电路的单事件扰动和总电离剂量响应
2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Pub Date : 2022-07-01 DOI: 10.1109/REDW56037.2022.9921478
Jereme Neuendank, M. Spear, T. Wallace, D. Wilson, Jose Solano, G. Irumva, I. Esqueda, H. Barnaby, Lawrence T. Clark, J. Brunhaver, M. Turowski, E. Mikkola, D. Hughart, Joshua Young, J. Manuel, S. Agarwal, B. Vaandrager, G. Vizkelethy, A. Gutierrez, J. Trippe, Michael King, E. Bielejec, Matthew J. Marinella
{"title":"Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits","authors":"Jereme Neuendank, M. Spear, T. Wallace, D. Wilson, Jose Solano, G. Irumva, I. Esqueda, H. Barnaby, Lawrence T. Clark, J. Brunhaver, M. Turowski, E. Mikkola, D. Hughart, Joshua Young, J. Manuel, S. Agarwal, B. Vaandrager, G. Vizkelethy, A. Gutierrez, J. Trippe, Michael King, E. Bielejec, Matthew J. Marinella","doi":"10.1109/REDW56037.2022.9921478","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921478","url":null,"abstract":"Experimental results show the response of Global Foundries (GF) 12-nm bulk FinFET digital structures to 10 keV x-ray, $^{60}{mathrm Co}$ gamma rays, and heavy ions. Among the structures are circuits of 19 scan chains each made up of 15840 digital flip-flops (DFF). Other test structures include digital cells including modified inverters, two input NOR, three input NOR, two input NAND, and three input NAND. Heavy ion sources and 63.6 ${mathrm rad}({mathrm SiO}_{2})/{mathrm s}$ gamma rays were provided by Sandia National Laboratories in Albuquerque, New Mexico. The x-ray source was provided by the SES facility at AFRL in Albuquerque, New Mexico. Single event upset (SEU) cross-sections vs. ion linear energy transfer (LET) for the digital flip-flop chains are extracted. Total ionizing dose (TID) experimental results for both the modified digital cells and DFF circuits are reported.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133816707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
NASA Goddard Space Flight Center’s Recent Radiation Effects Test Results 美国宇航局戈达德太空飞行中心最近的辐射效应测试结果
2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Pub Date : 2022-07-01 DOI: 10.1109/REDW56037.2022.9921535
Alyson D. Topper, M. O’Bryan, E. Wilcox, Thomas A. Carstens, Jonathan D. Barth, M. Berg, M. Casey, Matthew B. Joplin, J. Lauenstein, M. Campola, Donna J. Cochran, J. Pellish, Peter J. Majewicz
{"title":"NASA Goddard Space Flight Center’s Recent Radiation Effects Test Results","authors":"Alyson D. Topper, M. O’Bryan, E. Wilcox, Thomas A. Carstens, Jonathan D. Barth, M. Berg, M. Casey, Matthew B. Joplin, J. Lauenstein, M. Campola, Donna J. Cochran, J. Pellish, Peter J. Majewicz","doi":"10.1109/REDW56037.2022.9921535","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921535","url":null,"abstract":"Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FPGAs, optoelectronics, digital, analog, and bipolar devices.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114156829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Total Ionizing Dose Response of Commercial 22nm FD-SOI CMOS Technology 22nm商用FD-SOI CMOS技术的总电离剂量响应
2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Pub Date : 2022-07-01 DOI: 10.1109/REDW56037.2022.9921673
Jose Solano, M. Spear, T. Wallace, D. Wilson, Oliver Forman, I. Esqueda, H. Barnaby, A. Privat, M. Turowski, R. Vonniederhausern
{"title":"Total Ionizing Dose Response of Commercial 22nm FD-SOI CMOS Technology","authors":"Jose Solano, M. Spear, T. Wallace, D. Wilson, Oliver Forman, I. Esqueda, H. Barnaby, A. Privat, M. Turowski, R. Vonniederhausern","doi":"10.1109/REDW56037.2022.9921673","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921673","url":null,"abstract":"Experimental results showing the response of 22nm fully depleted silicon-on-insulator (FD-SOI) devices are presented. Gate voltage shift at a constant drain current is extracted and compared across all similar devices of varying width.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127107278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TID and SEE Evaluation on a Universal input, 10-output low impedance LVCMOS buffer 通用输入10输出低阻抗LVCMOS缓冲器的TID和SEE评估
2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Pub Date : 2022-07-01 DOI: 10.1109/REDW56037.2022.9921504
J. Budroweit, N. Aksteiner
{"title":"TID and SEE Evaluation on a Universal input, 10-output low impedance LVCMOS buffer","authors":"J. Budroweit, N. Aksteiner","doi":"10.1109/REDW56037.2022.9921504","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921504","url":null,"abstract":"This paper presents the latest test results of the Texas Instruments CDCLVC1310, a universal input, 10-output low impedance LVCMOS buffer. The device has been tested for total ionizing dose effects up to $sim 250$ krad(SiO2), including high and low dose rate conditions. Furthermore, the response to single event effects using protons and heavy-ions has been investigated. Here, no destructive events and a fairly low event rate for soft errors were observed.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126384269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Neutron Induced Displacement Damage in Commercial Power Management Integrated Circuits 商用电源管理集成电路中的中子诱发位移损伤
2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Pub Date : 2022-07-01 DOI: 10.1109/REDW56037.2022.9921647
Gauri Koli, E. Auden, H. Quinn
{"title":"Neutron Induced Displacement Damage in Commercial Power Management Integrated Circuits","authors":"Gauri Koli, E. Auden, H. Quinn","doi":"10.1109/REDW56037.2022.9921647","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921647","url":null,"abstract":"Atmospheric neutrons can produce damaging effects in power management integrated circuits (PMICs). Three commercial PMICs have been irradiated with neutrons to investigate displacement damage effects in low drop-out (LDO) and step-down (Buck) voltage regulators.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122863881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
100SW1502 Optocoupler TID & DDD Tests 100SW1502光耦合器TID和DDD测试
2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Pub Date : 2022-07-01 DOI: 10.1109/REDW56037.2022.9921509
Zach Olson, Roberto M. Monreal, J. Vloet
{"title":"100SW1502 Optocoupler TID & DDD Tests","authors":"Zach Olson, Roberto M. Monreal, J. Vloet","doi":"10.1109/REDW56037.2022.9921509","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921509","url":null,"abstract":"A novel optocoupler 100SW1502 was developed in-house in response to mechanical, electrical, and thermal failures of other commercially available optocouplers in the aerospace environment. It was designed with package features intended to prevent those failures. In this paper, the 100SW1502 was tested for various parameter degradations at doses up to 300 kRad[Si] total ionizing dose and 1.5E+12 n/cm2 total displacement damage dose. At consecutive dose points, the parameters of current transfer ratio, cross-leakage, forward-voltage on the light emitting diode, and dark current were measured. All parameters tested within nominal limits with the exception of dark current mean+KTL increases under total ionizing dose. However, dark current levels were successfully restored to pre-irradiation levels by an annealing process. These results indicate that the 100SW1502 has a radiation hardness comparable to similar devices while preventing other failures experienced by those devices.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123174561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Guide to the 2021 IEEE Radiation Effects Data Workshop Record 2021年IEEE辐射效应数据研讨会记录指南
2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Pub Date : 2022-07-01 DOI: 10.1109/REDW56037.2022.9921729
D. Hiemstra
{"title":"Guide to the 2021 IEEE Radiation Effects Data Workshop Record","authors":"D. Hiemstra","doi":"10.1109/REDW56037.2022.9921729","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921729","url":null,"abstract":"The 2021 Workshop Record has been, reviewed and a table prepared to facilitate the search for radiation response data by part number, type, or effect.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128440244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
SET Characterization of a High and Low Side Gate Driver (RIC7S113) using Pulsed Laser and Heavy Ion Testing 基于脉冲激光和重离子测试的高低侧栅极驱动器(RIC7S113)的SET特性
2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Pub Date : 2022-07-01 DOI: 10.1109/REDW56037.2022.9921552
J. Warner, Eric Faraci, Chi H. Pham, A. Khachatrian, D. McMorrow
{"title":"SET Characterization of a High and Low Side Gate Driver (RIC7S113) using Pulsed Laser and Heavy Ion Testing","authors":"J. Warner, Eric Faraci, Chi H. Pham, A. Khachatrian, D. McMorrow","doi":"10.1109/REDW56037.2022.9921552","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921552","url":null,"abstract":"The SET response of the RIC7S113 gate driver was characterized using pulsed laser and heavy ion accelerator testing. The SET response between the two methods are compared.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133366013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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