TID and SEE Evaluation on a Universal input, 10-output low impedance LVCMOS buffer

J. Budroweit, N. Aksteiner
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Abstract

This paper presents the latest test results of the Texas Instruments CDCLVC1310, a universal input, 10-output low impedance LVCMOS buffer. The device has been tested for total ionizing dose effects up to $\sim 250$ krad(SiO2), including high and low dose rate conditions. Furthermore, the response to single event effects using protons and heavy-ions has been investigated. Here, no destructive events and a fairly low event rate for soft errors were observed.
通用输入10输出低阻抗LVCMOS缓冲器的TID和SEE评估
本文介绍了德州仪器CDCLVC1310的最新测试结果。CDCLVC1310是一款通用输入、10输出低阻抗LVCMOS缓冲器。该装置已经测试了总电离剂量效应高达$ $ sim 250$ krad(SiO2),包括高剂量率和低剂量率条件。此外,还研究了质子和重离子对单事件效应的响应。在这里,观察到没有破坏性事件和相当低的软错误事件率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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