S. Messenger, Codie Mishler, James Hack, Paul Dudek
{"title":"Characterization of the Effects of 250 MeV Proton-Induced Total Ionizing Dose and Displacement Damage on the 66266 Optocoupler","authors":"S. Messenger, Codie Mishler, James Hack, Paul Dudek","doi":"10.1109/REDW56037.2022.9921540","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921540","url":null,"abstract":"This paper explores the combined effects of total ionizing dose and displacement damage caused by 250 MeV protons on the Micropac 66266 optocoupler. Proton fluences up to $4 times 10^{12}$ were used for this radiation test.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122809284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Lew, A. Mariñelarena, J. Cruz-Colon, N. Cunningham
{"title":"Radiation Evaluation of the TPS7H4010-SEP Step-Down Voltage Converter","authors":"T. Lew, A. Mariñelarena, J. Cruz-Colon, N. Cunningham","doi":"10.1109/REDW56037.2022.9921486","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921486","url":null,"abstract":"Single Events Effect (SEE) characterization results for TPS7H4010-SEP Step-Down Converter is summarized, showing very robust SEE performance up to LET<inf>EFF</inf> = 43 MeV-cm<sup>2</sup>/mg.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127377937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Poivey, R. Harboe-Sørensen, M. Pinto, M. Poizat, N. Fleurinck, K. Grürmann, H. Schmidt
{"title":"SEL and SEU In-Flight Data From Memories on-board PROBA-II Spacecraft","authors":"C. Poivey, R. Harboe-Sørensen, M. Pinto, M. Poizat, N. Fleurinck, K. Grürmann, H. Schmidt","doi":"10.1109/REDW56037.2022.9921736","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921736","url":null,"abstract":"This paper presents an analysis of the SEE in-flight data of memories on board Proba-II spacecraft. Proba-II spacecraft has been flying on a LEO orbit since November 2009. Observed in-flight error rates are compared with predictions based on ground test data.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128095045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Single Event Effect Measurements of Micron Technology 128Gb Single-Level NAND Flash Memory","authors":"F. Irom, G. Allen","doi":"10.1109/REDW56037.2022.9921469","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921469","url":null,"abstract":"Heavy ion single-event measurements on 128Gb Micron Technology single-level NAND flash memory are reported. Two single event effect (SEE) phenomena were investigated: single bit upsets (SBUs) and single effect functional interrupts (SEFIs).","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"73 10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130204390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Zafrani, J. Brandt, R. Strittmatter, B. Sun, S. Zhang, A. Lidow
{"title":"Radiation Results for Modern GaN-on-Si Power Transistors","authors":"M. Zafrani, J. Brandt, R. Strittmatter, B. Sun, S. Zhang, A. Lidow","doi":"10.1109/REDW56037.2022.9921699","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921699","url":null,"abstract":"Latest generation GaN-on-Si power transistors (EPC7XXX Series), specifically designed for high radiation resistance and low dynamic on-resistance, are rigorously tested for: (i) hard-switching dynamic RDS(on); (ii) single event effects (SEE); (iii) total ionizing dose (TID); (iv) neutron displacement damage; and (v) low dose gamma ray (LDRs). The combined results show excellent electrical stability and radiation immunity, demonstrating a major step forward compared to earlier generation GaN-on-Si devices.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133386592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Koga, S. Davis, A. Yarbrough, J. Shanney, Kenneth Pham, C. Cao, K. Pham, J. Dixon
{"title":"Proton Induced Single Event Effects on the Arria 10 Commercial off-the-shelf CMOS Field Programmable Gate Array","authors":"R. Koga, S. Davis, A. Yarbrough, J. Shanney, Kenneth Pham, C. Cao, K. Pham, J. Dixon","doi":"10.1109/REDW56037.2022.9921477","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921477","url":null,"abstract":"We present observations of proton induced single event effects on the Arria 10 commercial off-the-shelf (COTS) CMOS FPGA at three proton energy levels. The SRAM-based FPGA was sensitive to protons below 50 MeV.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129067652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jesse Ward, Jayden McKoy, I. Jeffrey, David Ross, P. Ferguson
{"title":"Radiation Assessment of Two Automotive-Grade N-Channel MOSFETs","authors":"Jesse Ward, Jayden McKoy, I. Jeffrey, David Ross, P. Ferguson","doi":"10.1109/REDW56037.2022.9921622","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921622","url":null,"abstract":"This research conducted total ionizing dose and single event effect testing of two automotive-grade N-Channel MOSFETs for qualification for use in low Earth orbit satellites. A decrease in the threshold voltage was observed in both components after 25 kRad(Si) of radiation exposure. Testing showed that with appropriate design margin for threshold voltages, the components may be suitable for use on satellites operating in a 500 km altitude Earth orbit with mission durations approximately between five to ten years.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124557906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Raspberry Pi Zero and 3B+ SEE and TID Test Results","authors":"S. Guertin, Sergeh Vartanian, A. Daniel","doi":"10.1109/REDW56037.2022.9921679","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921679","url":null,"abstract":"We report SEE and TID testing of Raspberry Pi Zero and Raspberry Pi 3B+ computers. SEFI modes, display errors, and file transfer failures dominated the responses.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123895153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Z. Yang, D. Hiemstra, S. Shi, C. Jin, Z. -. Li, L. Chen
{"title":"Displacement Damage and Total Ionizing Dose at High and Low Dose Rate Performance of an Optocoupler","authors":"Z. Yang, D. Hiemstra, S. Shi, C. Jin, Z. -. Li, L. Chen","doi":"10.1109/REDW56037.2022.9921554","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921554","url":null,"abstract":"Displacement damage dose and total ionizing dose performance of an optocoupler were studied by using 105 MeV protons and ${}^{60}mathrm{Co}$ irradiation. The results show degradation due to displacement damage dose is more significant than ionizing dose. Ionizing dose degradation is shown to not depend on dose rate. The optocoupler's performance in the space radiation environment is discussed.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129443254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}