Radiation Assessment of Two Automotive-Grade N-Channel MOSFETs

Abstract

This research conducted total ionizing dose and single event effect testing of two automotive-grade N-Channel MOSFETs for qualification for use in low Earth orbit satellites. A decrease in the threshold voltage was observed in both components after 25 kRad(Si) of radiation exposure. Testing showed that with appropriate design margin for threshold voltages, the components may be suitable for use on satellites operating in a 500 km altitude Earth orbit with mission durations approximately between five to ten years.