美光128Gb单级NAND闪存的单事件效应测量

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Pub Date : 2022-07-01 DOI:10.1109/REDW56037.2022.9921469

F. Irom, G. Allen

{"title":"美光128Gb单级NAND闪存的单事件效应测量","authors":"F. Irom, G. Allen","doi":"10.1109/REDW56037.2022.9921469","DOIUrl":null,"url":null,"abstract":"Heavy ion single-event measurements on 128Gb Micron Technology single-level NAND flash memory are reported. Two single event effect (SEE) phenomena were investigated: single bit upsets (SBUs) and single effect functional interrupts (SEFIs).","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"73 10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Single Event Effect Measurements of Micron Technology 128Gb Single-Level NAND Flash Memory\",\"authors\":\"F. Irom, G. Allen\",\"doi\":\"10.1109/REDW56037.2022.9921469\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Heavy ion single-event measurements on 128Gb Micron Technology single-level NAND flash memory are reported. Two single event effect (SEE) phenomena were investigated: single bit upsets (SBUs) and single effect functional interrupts (SEFIs).\",\"PeriodicalId\":202271,\"journal\":{\"name\":\"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)\",\"volume\":\"73 10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/REDW56037.2022.9921469\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW56037.2022.9921469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

报道了128Gb美光技术单级NAND闪存的重离子单事件测量。研究了两种单事件效应(SEE)现象:单比特中断(SBUs)和单效应功能中断(sefi)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Single Event Effect Measurements of Micron Technology 128Gb Single-Level NAND Flash Memory

Heavy ion single-event measurements on 128Gb Micron Technology single-level NAND flash memory are reported. Two single event effect (SEE) phenomena were investigated: single bit upsets (SBUs) and single effect functional interrupts (SEFIs).

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)

自引率

0.00%

发文量