250 MeV质子诱导总电离剂量和位移损伤对66266光耦合器影响的表征

S. Messenger, Codie Mishler, James Hack, Paul Dudek
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引用次数: 1

摘要

研究了总电离剂量和250 MeV质子位移损伤对Micropac 66266光耦合器的综合影响。该辐射试验使用了高达4 × 10^{12}$的质子影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterization of the Effects of 250 MeV Proton-Induced Total Ionizing Dose and Displacement Damage on the 66266 Optocoupler
This paper explores the combined effects of total ionizing dose and displacement damage caused by 250 MeV protons on the Micropac 66266 optocoupler. Proton fluences up to $4 \times 10^{12}$ were used for this radiation test.
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