Single Event Effect Measurements of Micron Technology 128Gb Single-Level NAND Flash Memory

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Pub Date : 2022-07-01 DOI:10.1109/REDW56037.2022.9921469

F. Irom, G. Allen

引用次数: 0

Abstract

Heavy ion single-event measurements on 128Gb Micron Technology single-level NAND flash memory are reported. Two single event effect (SEE) phenomena were investigated: single bit upsets (SBUs) and single effect functional interrupts (SEFIs).

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美光128Gb单级NAND闪存的单事件效应测量

报道了128Gb美光技术单级NAND闪存的重离子单事件测量。研究了两种单事件效应(SEE)现象:单比特中断(SBUs)和单效应功能中断(sefi)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)

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