两个汽车级n沟道mosfet的辐射评估

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Pub Date : 2022-07-01 DOI:10.1109/REDW56037.2022.9921622

Jesse Ward, Jayden McKoy, I. Jeffrey, David Ross, P. Ferguson

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引用次数: 0

摘要

本研究对两个汽车级n沟道mosfet进行了总电离剂量和单事件效应测试，以获得在近地轨道卫星上使用的资格。在25 kRad(Si)的辐射照射后，观察到两组分的阈值电压均有所下降。测试表明，在阈值电压的适当设计余量下，这些组件可能适用于在500公里高度的地球轨道上运行的卫星，其任务持续时间约为5至10年。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Radiation Assessment of Two Automotive-Grade N-Channel MOSFETs

This research conducted total ionizing dose and single event effect testing of two automotive-grade N-Channel MOSFETs for qualification for use in low Earth orbit satellites. A decrease in the threshold voltage was observed in both components after 25 kRad(Si) of radiation exposure. Testing showed that with appropriate design margin for threshold voltages, the components may be suitable for use on satellites operating in a 500 km altitude Earth orbit with mission durations approximately between five to ten years.

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来源期刊

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)

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