现代GaN-on-Si功率晶体管的辐射结果

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Pub Date : 2022-07-01 DOI:10.1109/REDW56037.2022.9921699

M. Zafrani, J. Brandt, R. Strittmatter, B. Sun, S. Zhang, A. Lidow

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引用次数: 0

摘要

最新一代GaN-on-Si功率晶体管(EPC7XXX系列)，专为高辐射电阻和低动态导通电阻而设计，经过严格测试:(i)硬开关动态RDS(on);(ii)单事件效应(SEE);(iii)总电离剂量(TID);(iv)中子位移损伤;(v)低剂量伽马射线(LDRs)。综合结果显示出优异的电稳定性和抗辐射能力，与上一代GaN-on-Si器件相比，这是一个重要的进步。

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Radiation Results for Modern GaN-on-Si Power Transistors

Latest generation GaN-on-Si power transistors (EPC7XXX Series), specifically designed for high radiation resistance and low dynamic on-resistance, are rigorously tested for: (i) hard-switching dynamic RDS(on); (ii) single event effects (SEE); (iii) total ionizing dose (TID); (iv) neutron displacement damage; and (v) low dose gamma ray (LDRs). The combined results show excellent electrical stability and radiation immunity, demonstrating a major step forward compared to earlier generation GaN-on-Si devices.

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来源期刊

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)

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