{"title":"100SW1502光耦合器TID和DDD测试","authors":"Zach Olson, Roberto M. Monreal, J. Vloet","doi":"10.1109/REDW56037.2022.9921509","DOIUrl":null,"url":null,"abstract":"A novel optocoupler 100SW1502 was developed in-house in response to mechanical, electrical, and thermal failures of other commercially available optocouplers in the aerospace environment. It was designed with package features intended to prevent those failures. In this paper, the 100SW1502 was tested for various parameter degradations at doses up to 300 kRad[Si] total ionizing dose and 1.5E+12 n/cm2 total displacement damage dose. At consecutive dose points, the parameters of current transfer ratio, cross-leakage, forward-voltage on the light emitting diode, and dark current were measured. All parameters tested within nominal limits with the exception of dark current mean+KTL increases under total ionizing dose. However, dark current levels were successfully restored to pre-irradiation levels by an annealing process. These results indicate that the 100SW1502 has a radiation hardness comparable to similar devices while preventing other failures experienced by those devices.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"100SW1502 Optocoupler TID & DDD Tests\",\"authors\":\"Zach Olson, Roberto M. Monreal, J. Vloet\",\"doi\":\"10.1109/REDW56037.2022.9921509\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel optocoupler 100SW1502 was developed in-house in response to mechanical, electrical, and thermal failures of other commercially available optocouplers in the aerospace environment. It was designed with package features intended to prevent those failures. In this paper, the 100SW1502 was tested for various parameter degradations at doses up to 300 kRad[Si] total ionizing dose and 1.5E+12 n/cm2 total displacement damage dose. At consecutive dose points, the parameters of current transfer ratio, cross-leakage, forward-voltage on the light emitting diode, and dark current were measured. All parameters tested within nominal limits with the exception of dark current mean+KTL increases under total ionizing dose. However, dark current levels were successfully restored to pre-irradiation levels by an annealing process. These results indicate that the 100SW1502 has a radiation hardness comparable to similar devices while preventing other failures experienced by those devices.\",\"PeriodicalId\":202271,\"journal\":{\"name\":\"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)\",\"volume\":\"76 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/REDW56037.2022.9921509\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW56037.2022.9921509","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel optocoupler 100SW1502 was developed in-house in response to mechanical, electrical, and thermal failures of other commercially available optocouplers in the aerospace environment. It was designed with package features intended to prevent those failures. In this paper, the 100SW1502 was tested for various parameter degradations at doses up to 300 kRad[Si] total ionizing dose and 1.5E+12 n/cm2 total displacement damage dose. At consecutive dose points, the parameters of current transfer ratio, cross-leakage, forward-voltage on the light emitting diode, and dark current were measured. All parameters tested within nominal limits with the exception of dark current mean+KTL increases under total ionizing dose. However, dark current levels were successfully restored to pre-irradiation levels by an annealing process. These results indicate that the 100SW1502 has a radiation hardness comparable to similar devices while preventing other failures experienced by those devices.