100SW1502光耦合器TID和DDD测试

Zach Olson, Roberto M. Monreal, J. Vloet
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引用次数: 0

摘要

为了应对航空航天环境中其他商用光耦合器的机械、电气和热故障,公司内部开发了一种新型光耦合器100SW1502。它被设计为具有旨在防止这些故障的包功能。在本文中,100SW1502在高达300 kRad[Si]总电离剂量和1.5E+12 n/cm2总位移损伤剂量下进行了各种参数降解测试。在连续剂量点,测量电流传递比、交叉漏电流、发光二极管正向电压和暗电流等参数。除暗电流平均值+KTL在总电离剂量下增加外,所有参数均在标称限度内测试。然而,通过退火工艺,暗电流水平成功地恢复到辐照前的水平。这些结果表明,100SW1502具有与同类器件相当的辐射硬度,同时防止了这些器件经历的其他故障。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
100SW1502 Optocoupler TID & DDD Tests
A novel optocoupler 100SW1502 was developed in-house in response to mechanical, electrical, and thermal failures of other commercially available optocouplers in the aerospace environment. It was designed with package features intended to prevent those failures. In this paper, the 100SW1502 was tested for various parameter degradations at doses up to 300 kRad[Si] total ionizing dose and 1.5E+12 n/cm2 total displacement damage dose. At consecutive dose points, the parameters of current transfer ratio, cross-leakage, forward-voltage on the light emitting diode, and dark current were measured. All parameters tested within nominal limits with the exception of dark current mean+KTL increases under total ionizing dose. However, dark current levels were successfully restored to pre-irradiation levels by an annealing process. These results indicate that the 100SW1502 has a radiation hardness comparable to similar devices while preventing other failures experienced by those devices.
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