22nm商用FD-SOI CMOS技术的总电离剂量响应

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Pub Date : 2022-07-01 DOI:10.1109/REDW56037.2022.9921673

Jose Solano, M. Spear, T. Wallace, D. Wilson, Oliver Forman, I. Esqueda, H. Barnaby, A. Privat, M. Turowski, R. Vonniederhausern

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引用次数: 0

摘要

实验结果显示了22nm完全耗尽绝缘体上硅(FD-SOI)器件的响应。在恒定漏极电流下提取栅极电压位移，并在所有类似的变宽器件之间进行比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Total Ionizing Dose Response of Commercial 22nm FD-SOI CMOS Technology

Experimental results showing the response of 22nm fully depleted silicon-on-insulator (FD-SOI) devices are presented. Gate voltage shift at a constant drain current is extracted and compared across all similar devices of varying width.

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来源期刊

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)

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