{"title":"A Study of Neutron Induced Single-Event Damage in AlGaN/GaN HEMTs","authors":"Han Gao, Danyal Ahsanullah, R. Baumann, B. Gnade","doi":"10.1109/REDW56037.2022.9921516","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921516","url":null,"abstract":"GaN power device lifetime degradation caused by neutron irradiation is reported. Hundreds of devices were stressed in off-state with various drain voltages from 75 V to 400 V while irradiated with a high intensity neutron beam. Observing a statistically significant number of neutron-induced destructive single-event-effects (DSEEs) enabled an accurate extrapolation of terrestrial field failure rates.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132979651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Neutron-Induced SEEs in the Xilinx Versal Prime","authors":"H. Quinn, C. Corley, P. Thelen","doi":"10.1109/REDW56037.2022.9921523","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921523","url":null,"abstract":"Results from neutron testing of the Xilinx Versal Prime adaptive compute acceleration platform (ACAP) are presented. The Xilinx Versal is an adaptive computing platform that is designed to do high-speed artificial intelligence calculations, which could be useful for deployed digital and image processing systems that need higher performance computing than radiation-hardened microprocessors but do not want to create a full field-programmable gate array (FPGA) design. The Versal VMK180 evaluation board was irradiated in August 2021 at LANSCE in the ICE House II flight path. This test shows that the FinFET transistors used in the Versal Prime are 10-1000 less sensitive to SEUs than other microprocessors, due to the 7 nm FintFET transistors and the use of error correcting codes. The SEFI sensitivity remains predominantly unchanged from previous generation parts.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131232471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Zajac, Amanda N. Bozovich, Stacie Woo, R. Davies, B. Rax, Joe Davila, Duc Nguyen, Wilson P. Parker, A. Kenna, Jason L. Thomas
{"title":"Extended Compendium of Total Ionizing Dose (TID) Test Results for the Europa Clipper Mission","authors":"S. Zajac, Amanda N. Bozovich, Stacie Woo, R. Davies, B. Rax, Joe Davila, Duc Nguyen, Wilson P. Parker, A. Kenna, Jason L. Thomas","doi":"10.1109/REDW56037.2022.9921661","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921661","url":null,"abstract":"Results of total ionizing dose (TID) tests and analysis on Electric, Electronic, and Electromechanical (EEE) parts, performed by the Jet Propulsion Laboratory in support of the Europa Clipper Mission.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"21 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124457420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Leuenberger, Russell Stevens, N. Rezzak, Dorian Johnson
{"title":"Single Event Effects Characterization of Microchip Programmable Current Limiting Power Switch LX7712","authors":"M. Leuenberger, Russell Stevens, N. Rezzak, Dorian Johnson","doi":"10.1109/REDW56037.2022.9921576","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921576","url":null,"abstract":"The heavy ions single event effect characterization results of Microchip Technology’s radiation-hardened programmable current limiting power switch IC, the LX7712, are presented. The data shown are based on single event campaign of September 2021.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123884473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Single Event Effects Susceptibilities of Select Commercial-Off-The-Shelf Components for Space","authors":"Daniel H. Lo, T. Tran","doi":"10.1109/REDW56037.2022.9921706","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921706","url":null,"abstract":"This paper reports the results of single event effects (SEE) testing with heavy ions of commercial-off-the-shelf (COTS) electronic components considered for Class C/D space missions.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132019267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Compendium of Current Heavy Ion Single-Event Effects Test Results for Candidate Electronics for NASA Johnson Space Center","authors":"Joshua M. Pritts, R. Gaza, C. Bailey, K. Nguyen","doi":"10.1109/REDW56037.2022.9921663","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921663","url":null,"abstract":"We present radiation effects test results and analysis produced by NASA JSC in 2021 for candidate electronic components and devices. Devices tested include integrated circuits, MOSFETs, DC-DC converters, and various commercial solutions.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128946120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Neutron-Induced Single-Event Effects and Total Ionizing Dose in Embedded Radios","authors":"E. Auden, M. Caffrey","doi":"10.1109/REDW56037.2022.9921485","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921485","url":null,"abstract":"Single-event effects, displacement damage, and total ionizing dose are characterized for a commercial-off-the-shelf embedded radio irradiated with neutrons and gamma rays. The radio’s radiation tolerance is investigated as part of an evaluation for possible spaceflight on short-term exploratory satellites.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116173409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Turnbull, E. Serna, P. Nelson, M. Thun, J. Yount
{"title":"Single Event Effect and Total Ionizing Dose Characterization of CAES 1.25 Gbps Repeater","authors":"A. Turnbull, E. Serna, P. Nelson, M. Thun, J. Yount","doi":"10.1109/REDW56037.2022.9921662","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921662","url":null,"abstract":"Single Event Latch-up (SEL), Single Event Transient and Total Ionizing Dose (TID) radiation characterization were performed on CAES UT54LVDS454 1.25 Gbps LVDS repeater. The device was shown to be suitable for space applications.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"380 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123243032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mondol Anik Kumar, M. Raquibuzzaman, Matchima Buddhanoy, M. Wasiolek, K. Hattar, T. Boykin, B. Ray
{"title":"Total-Ionizing-Dose Effects on Threshold Voltage Distribution of 64-Layer 3D NAND Memories","authors":"Mondol Anik Kumar, M. Raquibuzzaman, Matchima Buddhanoy, M. Wasiolek, K. Hattar, T. Boykin, B. Ray","doi":"10.1109/REDW56037.2022.9921459","DOIUrl":"https://doi.org/10.1109/REDW56037.2022.9921459","url":null,"abstract":"We measure total-ionizing-dose (TID) induced threshold voltage $left(V_{t}right)$ loss of a commercial 64-layer triple-level-cell (TLC) 3D NAND memory using user-mode commands. Our experiments show that Vt distributions closely follow Gaussian distributions. At increasing TID, the distributions shift toward lower average values and the distribution widths widen. We calculate exact cell Vt shifts from the pre-irradiation conditions at different TID values. We find that $V_{t} operatorname{loss}left(Delta V_{t}right)$ distributions also follow Gaussian distributions. We also find that $Delta V_{t}$ values strongly depend on the cell programmed states.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124600182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}