A Study of Neutron Induced Single-Event Damage in AlGaN/GaN HEMTs

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Pub Date : 2022-07-01 DOI:10.1109/REDW56037.2022.9921516

Han Gao, Danyal Ahsanullah, R. Baumann, B. Gnade

引用次数: 2

Abstract

GaN power device lifetime degradation caused by neutron irradiation is reported. Hundreds of devices were stressed in off-state with various drain voltages from 75 V to 400 V while irradiated with a high intensity neutron beam. Observing a statistically significant number of neutron-induced destructive single-event-effects (DSEEs) enabled an accurate extrapolation of terrestrial field failure rates.

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中子诱导的AlGaN/GaN hemt单事件损伤研究

报道了中子辐照引起的氮化镓功率器件寿命下降。在高强度中子束辐照下，以75 ~ 400 V的漏极电压对数百个器件进行了非稳态应力处理。通过观察具有统计学意义的中子诱导破坏性单事件效应(DSEEs)，可以准确地推断出地面场故障率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)

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