总电离剂量对64层三维NAND存储器阈值电压分布的影响

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Pub Date : 2022-07-01 DOI:10.1109/REDW56037.2022.9921459

Mondol Anik Kumar, M. Raquibuzzaman, Matchima Buddhanoy, M. Wasiolek, K. Hattar, T. Boykin, B. Ray

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引用次数: 3

摘要

我们使用用户模式命令测量了商用64层三电平单元(TLC) 3D NAND存储器的总电离剂量(TID)诱导阈值电压$\left(V_{t}\right)$损耗。我们的实验表明，Vt分布非常接近高斯分布。随着TID的增加，分布向低平均值偏移，分布宽度变宽。我们计算了不同TID值下辐照前的细胞Vt位移。我们发现$V_{t} \operatorname{loss}\left(\Delta V_{t}\right)$分布也遵循高斯分布。我们还发现$\Delta V_{t}$值强烈依赖于细胞编程状态。

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Total-Ionizing-Dose Effects on Threshold Voltage Distribution of 64-Layer 3D NAND Memories

We measure total-ionizing-dose (TID) induced threshold voltage $\left(V_{t}\right)$ loss of a commercial 64-layer triple-level-cell (TLC) 3D NAND memory using user-mode commands. Our experiments show that Vt distributions closely follow Gaussian distributions. At increasing TID, the distributions shift toward lower average values and the distribution widths widen. We calculate exact cell Vt shifts from the pre-irradiation conditions at different TID values. We find that $V_{t} \operatorname{loss}\left(\Delta V_{t}\right)$ distributions also follow Gaussian distributions. We also find that $\Delta V_{t}$ values strongly depend on the cell programmed states.

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来源期刊

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)

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