通用输入10输出低阻抗LVCMOS缓冲器的TID和SEE评估

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Pub Date : 2022-07-01 DOI:10.1109/REDW56037.2022.9921504

J. Budroweit, N. Aksteiner

{"title":"通用输入10输出低阻抗LVCMOS缓冲器的TID和SEE评估","authors":"J. Budroweit, N. Aksteiner","doi":"10.1109/REDW56037.2022.9921504","DOIUrl":null,"url":null,"abstract":"This paper presents the latest test results of the Texas Instruments CDCLVC1310, a universal input, 10-output low impedance LVCMOS buffer. The device has been tested for total ionizing dose effects up to $\\sim 250$ krad(SiO2), including high and low dose rate conditions. Furthermore, the response to single event effects using protons and heavy-ions has been investigated. Here, no destructive events and a fairly low event rate for soft errors were observed.","PeriodicalId":202271,"journal":{"name":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"TID and SEE Evaluation on a Universal input, 10-output low impedance LVCMOS buffer\",\"authors\":\"J. Budroweit, N. Aksteiner\",\"doi\":\"10.1109/REDW56037.2022.9921504\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the latest test results of the Texas Instruments CDCLVC1310, a universal input, 10-output low impedance LVCMOS buffer. The device has been tested for total ionizing dose effects up to $\\\\sim 250$ krad(SiO2), including high and low dose rate conditions. Furthermore, the response to single event effects using protons and heavy-ions has been investigated. Here, no destructive events and a fairly low event rate for soft errors were observed.\",\"PeriodicalId\":202271,\"journal\":{\"name\":\"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/REDW56037.2022.9921504\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW56037.2022.9921504","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文介绍了德州仪器CDCLVC1310的最新测试结果。CDCLVC1310是一款通用输入、10输出低阻抗LVCMOS缓冲器。该装置已经测试了总电离剂量效应高达$ $ sim 250$ krad(SiO2)，包括高剂量率和低剂量率条件。此外，还研究了质子和重离子对单事件效应的响应。在这里，观察到没有破坏性事件和相当低的软错误事件率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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TID and SEE Evaluation on a Universal input, 10-output low impedance LVCMOS buffer

This paper presents the latest test results of the Texas Instruments CDCLVC1310, a universal input, 10-output low impedance LVCMOS buffer. The device has been tested for total ionizing dose effects up to $\sim 250$ krad(SiO2), including high and low dose rate conditions. Furthermore, the response to single event effects using protons and heavy-ions has been investigated. Here, no destructive events and a fairly low event rate for soft errors were observed.

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来源期刊

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)

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