SET Characterization of a High and Low Side Gate Driver (RIC7S113) using Pulsed Laser and Heavy Ion Testing

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC) Pub Date : 2022-07-01 DOI:10.1109/REDW56037.2022.9921552

J. Warner, Eric Faraci, Chi H. Pham, A. Khachatrian, D. McMorrow

引用次数: 0

Abstract

The SET response of the RIC7S113 gate driver was characterized using pulsed laser and heavy ion accelerator testing. The SET response between the two methods are compared.

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基于脉冲激光和重离子测试的高低侧栅极驱动器(RIC7S113)的SET特性

采用脉冲激光和重离子加速器测试对RIC7S113栅极驱动器的SET响应进行了表征。比较了两种方法的SET响应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)

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