2006 IEEE International Symposium on Power Semiconductor Devices and IC's最新文献_第2页

V-JFET Transistors for over voltage protection in power device series connected applications 在功率器件串联应用中过压保护的V-JFET晶体管

2006 IEEE International Symposium on Power Semiconductor Devices and IC's Pub Date : 2006-06-04 DOI: 10.1109/ISPSD.2006.1666119

L. Vincent, B. Nguyen-Dac, J. Crebier, F. Alkayal, C. Schaeffer

{"title":"V-JFET Transistors for over voltage protection in power device series connected applications","authors":"L. Vincent, B. Nguyen-Dac, J. Crebier, F. Alkayal, C. Schaeffer","doi":"10.1109/ISPSD.2006.1666119","DOIUrl":"https://doi.org/10.1109/ISPSD.2006.1666119","url":null,"abstract":"Nowadays, MOSFET and IGBT components are widely used in medium and high power converters. They are subjected to increasing requirements: electrical performances, simple implementation, reliability, integration, smaller volume and price. Moreover, their integration process offers the possibility to reduce and to eliminate the need for pick and place, bonding (wafer-and/or ball-bonding) and other assembly processes necessary in hybrid assemblies, and in the same time to add some useful functionality like sensors for protection and control. This paper presents a possible solution for the monolithic integration of over voltage protection circuits for power MOSFETs or IGBTs. The solution contains a vertical JFET transistor, integrated together, in the same die, with the main switch (MOSFET/IGBT). The specific characteristic of vertical JFET with diffused gates is used to control over voltage and voltage balance among devices associated in series connection. Thanks to voltage threshold control, the voltage protection level can be adjusted under operation. This new feature allows modifying the protection level and smoothness thanks to operating conditions. It allows redistributing voltage balance when one of several units, in the series connection, is out of operation, allowing the operation under failure mode operation. In addition, switching smoothness can also be adjusted thanks to VJFET control sensitivity. The paper presents the power electronic application fields. Then, vertical JFET operation and characteristics will be recalled. It is shown how it can be used for over voltage management. Two solutions are presented. One of them is studied and experimented to highlight the operation principles. Experimental results are provided based on prototypes realized, including a power MOSFET and a V-JFET within the same voltage terminations. Monolithic integration conditions are briefly addressed","PeriodicalId":198443,"journal":{"name":"2006 IEEE International Symposium on Power Semiconductor Devices and IC's","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116995666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

1200V Interconnection Technique with Isolated Self-Shielding Structure 具有隔离自屏蔽结构的1200V互连技术

2006 IEEE International Symposium on Power Semiconductor Devices and IC's Pub Date : 2006-06-04 DOI: 10.1109/ISPSD.2006.1666148

Sunglyong Kim, C. Jeon, Min-Suk Kim, Jong-jib Kim

引用次数: 4

Two-Carrier Current Saturation in a Lateral Dmos 横向Dmos中的双载流子电流饱和

2006 IEEE International Symposium on Power Semiconductor Devices and IC's Pub Date : 2006-06-04 DOI: 10.1109/ISPSD.2006.1666078

J. Lin, P. Hower

引用次数: 31

Novel Enhanced-Planar IGBT Technology Rated up to 6.5kV for Lower Losses and Higher SOA Capability 新型增强型平面IGBT技术，额定电压高达6.5kV，具有更低的损耗和更高的SOA能力

2006 IEEE International Symposium on Power Semiconductor Devices and IC's Pub Date : 2006-06-04 DOI: 10.1109/ISPSD.2006.1666064

Munaf T. A. Rahimo, A. Kopta, S. Linder

引用次数: 76

Problems on the SRH Recombination Model and a Proposed Solution SRH重组模型的若干问题及解决方法

2006 IEEE International Symposium on Power Semiconductor Devices and IC's Pub Date : 2006-06-04 DOI: 10.1109/ISPSD.2006.1666104

I. Takata

引用次数: 2

A new Principle for a Self-Protecting Power Transistor Array Design 一种自保护型功率晶体管阵列设计新原理

2006 IEEE International Symposium on Power Semiconductor Devices and IC's Pub Date : 2006-06-04 DOI: 10.1109/ISPSD.2006.1666079

V. Vashchenko, P. Hopper

引用次数: 11

TherMos3: a 3D electrothermal simulator for Smart Power Devices TherMos3:用于智能电源设备的3D电热模拟器

2006 IEEE International Symposium on Power Semiconductor Devices and IC's Pub Date : 2006-06-04 DOI: 10.1109/ISPSD.2006.1666109

A. Irace, G. Breglio, P. Spirito

引用次数: 7

A Complementary RF-LDMOS Architecture Compatible with 0.13μm CMOS Technology 兼容0.13μm CMOS技术的互补RF-LDMOS架构

2006 IEEE International Symposium on Power Semiconductor Devices and IC's Pub Date : 2006-06-04 DOI: 10.1109/ISPSD.2006.1666065

N. Mohapatra, H. Ruecker, K. Ehwald, R. Sorge, R. Barth, P. Schley, D. Schmidt, H. Wulf

引用次数: 12

Future Trend of Flat Panel Displays and Comparison of its Driving Methods 平板显示器的未来趋势及其驱动方式的比较

2006 IEEE International Symposium on Power Semiconductor Devices and IC's Pub Date : 2006-06-04 DOI: 10.1109/ISPSD.2006.1666053

S. Uchikoga

{"title":"Future Trend of Flat Panel Displays and Comparison of its Driving Methods","authors":"S. Uchikoga","doi":"10.1109/ISPSD.2006.1666053","DOIUrl":"https://doi.org/10.1109/ISPSD.2006.1666053","url":null,"abstract":"This paper reviews principles and driving methods for various type of flat panel displays (FPDs), such as liquid crystal displays (LCDs), organic light emitting displays (OLEDs) and plasma display panels (PDPs). For long time, Cathode ray tubes (CRTs) including CRT projection displays were the only device capable of exhibiting moving picture images applicable to TV receivers. To improve bulky and heavy structure of CRT, FPDs have been developed and are now available in the market. LCDs created various applications of displays, because of its size variation and high-resolution capability. It is essential to understand the operational principle of the display in order to meet the needs. The need of high image quality is increasing and the demand of portability is also increasing as visual information is provided in various media other than TV broadcasting. It is important to optimize the display specifications according to its application. There is a trend of adding new value to the display such as integrating input function and flexibility. The review also includes newly introduced surface conduction electron emitter displays (SEDs). Furthermore, this paper introduces aspects of future displays and trends in terms of specifications","PeriodicalId":198443,"journal":{"name":"2006 IEEE International Symposium on Power Semiconductor Devices and IC's","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121871850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 24

Integrated Over Voltage Protection Circuits for Power Transistors 功率晶体管集成过压保护电路

2006 IEEE International Symposium on Power Semiconductor Devices and IC's Pub Date : 2006-06-04 DOI: 10.1109/ISPSD.2006.1666116

F. Alkayal, J. Crebier, C. Schaeffer

{"title":"Integrated Over Voltage Protection Circuits for Power Transistors","authors":"F. Alkayal, J. Crebier, C. Schaeffer","doi":"10.1109/ISPSD.2006.1666116","DOIUrl":"https://doi.org/10.1109/ISPSD.2006.1666116","url":null,"abstract":"Nowadays, MOSFET and IGBT power components are widely used in medium and high power converters. They are subjected to increasing requirements: electrical performances, simple implementation, reliability, integration, smaller volume and price. Moreover, their integration process offers the possibility to reduce or eliminate the need for pick and place, bonding (wafer- and/or ball-bonding) and other assembly processes necessary in hybrid assemblies, and in the same time to add some useful functionality like sensors for protection and control. This paper presents an overview of integrated solutions for active over voltage protection circuits. A short state of the art presents the main integrated topologies and compares them. Technological, electrical and thermal compatibilities and interactions are investigated in order to outline what are the benefits but also the limitations of over voltage protection circuit integration. In particular, this analysis tries to evaluate the thermal impact of the protection circuit, which is a dissipative element, on the integrated die and the power switch. Monolithic and hybrid interconnects are also considered in the paper to outline possible benefits from the integration. Several results from simulations but also practice are available in the paper to validate comments and conclusions","PeriodicalId":198443,"journal":{"name":"2006 IEEE International Symposium on Power Semiconductor Devices and IC's","volume":"2016 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128056196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5