Problems on the SRH Recombination Model and a Proposed Solution

I. Takata
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引用次数: 2

Abstract

It's common that the present device simulator has a trouble to handle the life times in bipolar devices. However, the author could reproduce the JF-VF characteristics of some high speed pin diodes by including the radiative recombination. The simple SRH recombination model could not explain the JF-VF characteristics but also the JR-V R characteristics of pin diodes. Although the radiative recombination has been neglected in indirect semiconductors, the author would suggest the all types of recombination mechanisms, that are proportional to the carrier densities to the powered of one, two and three. And, the first one would contain a new powerful mechanism than the SRH's
SRH重组模型的若干问题及解决方法
目前的器件模拟器在处理双极器件的寿命时间方面存在问题,这是很常见的。然而,作者可以通过加入辐射复合来重现某些高速引脚二极管的JF-VF特性。简单的SRH复合模型不能解释引脚二极管的JF-VF特性,也不能解释引脚二极管的JR-V - R特性。虽然在间接半导体中忽略了辐射复合,但作者提出了所有类型的复合机制,这些机制与载流子密度成正比于1、2和3的功率。而且,第一个将包含一个比SRH更强大的新机制
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