{"title":"新型增强型平面IGBT技术，额定电压高达6.5kV，具有更低的损耗和更高的SOA能力","authors":"Munaf T. A. Rahimo, A. Kopta, S. Linder","doi":"10.1109/ISPSD.2006.1666064","DOIUrl":null,"url":null,"abstract":"In this paper, we introduce an IGBT planar technology, which sets a new performance benchmark in terms of losses and SOA capability. The improved trade-off relationship between on-state losses Vce(sat) and turn-off losses Eoff (i.e. technology curve) was solely realized by means of planar cell enhancement. Simultaneously, high levels of turn-off ruggedness (RBSOA) were obtained with the new cell design. The enhanced-planar IGBT technology is implemented on the soft-punch-through (SPT) buffer concept for ensuring controllable and soft switching behaviour. The paper covers design details of the enhanced-planar technology and a full set of results for the 6500V EP-IGBT chip","PeriodicalId":198443,"journal":{"name":"2006 IEEE International Symposium on Power Semiconductor Devices and IC's","volume":"302 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"76","resultStr":"{\"title\":\"Novel Enhanced-Planar IGBT Technology Rated up to 6.5kV for Lower Losses and Higher SOA Capability\",\"authors\":\"Munaf T. A. Rahimo, A. Kopta, S. Linder\",\"doi\":\"10.1109/ISPSD.2006.1666064\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we introduce an IGBT planar technology, which sets a new performance benchmark in terms of losses and SOA capability. The improved trade-off relationship between on-state losses Vce(sat) and turn-off losses Eoff (i.e. technology curve) was solely realized by means of planar cell enhancement. Simultaneously, high levels of turn-off ruggedness (RBSOA) were obtained with the new cell design. The enhanced-planar IGBT technology is implemented on the soft-punch-through (SPT) buffer concept for ensuring controllable and soft switching behaviour. The paper covers design details of the enhanced-planar technology and a full set of results for the 6500V EP-IGBT chip\",\"PeriodicalId\":198443,\"journal\":{\"name\":\"2006 IEEE International Symposium on Power Semiconductor Devices and IC's\",\"volume\":\"302 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"76\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Symposium on Power Semiconductor Devices and IC's\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2006.1666064\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Symposium on Power Semiconductor Devices and IC's","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2006.1666064","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Novel Enhanced-Planar IGBT Technology Rated up to 6.5kV for Lower Losses and Higher SOA Capability
In this paper, we introduce an IGBT planar technology, which sets a new performance benchmark in terms of losses and SOA capability. The improved trade-off relationship between on-state losses Vce(sat) and turn-off losses Eoff (i.e. technology curve) was solely realized by means of planar cell enhancement. Simultaneously, high levels of turn-off ruggedness (RBSOA) were obtained with the new cell design. The enhanced-planar IGBT technology is implemented on the soft-punch-through (SPT) buffer concept for ensuring controllable and soft switching behaviour. The paper covers design details of the enhanced-planar technology and a full set of results for the 6500V EP-IGBT chip
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