N. Mohapatra, H. Ruecker, K. Ehwald, R. Sorge, R. Barth, P. Schley, D. Schmidt, H. Wulf
{"title":"兼容0.13μm CMOS技术的互补RF-LDMOS架构","authors":"N. Mohapatra, H. Ruecker, K. Ehwald, R. Sorge, R. Barth, P. Schley, D. Schmidt, H. Wulf","doi":"10.1109/ISPSD.2006.1666065","DOIUrl":null,"url":null,"abstract":"In this paper, we present a modular and reliable complementary RF LDMOS (laterally diffused MOS) architecture fully compatible with a 0.13 mum CMOS platform. We demonstrate BVDS*fT values up to 560 and 210 GHzV, respectively, for N- and PLDMOS transistors. A major advantage of the proposed process flow is that the drift region of N- and PLDMOS transistors can be independently optimized for different BVDSwithout affecting the VT","PeriodicalId":198443,"journal":{"name":"2006 IEEE International Symposium on Power Semiconductor Devices and IC's","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A Complementary RF-LDMOS Architecture Compatible with 0.13μm CMOS Technology\",\"authors\":\"N. Mohapatra, H. Ruecker, K. Ehwald, R. Sorge, R. Barth, P. Schley, D. Schmidt, H. Wulf\",\"doi\":\"10.1109/ISPSD.2006.1666065\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present a modular and reliable complementary RF LDMOS (laterally diffused MOS) architecture fully compatible with a 0.13 mum CMOS platform. We demonstrate BVDS*fT values up to 560 and 210 GHzV, respectively, for N- and PLDMOS transistors. A major advantage of the proposed process flow is that the drift region of N- and PLDMOS transistors can be independently optimized for different BVDSwithout affecting the VT\",\"PeriodicalId\":198443,\"journal\":{\"name\":\"2006 IEEE International Symposium on Power Semiconductor Devices and IC's\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Symposium on Power Semiconductor Devices and IC's\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2006.1666065\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Symposium on Power Semiconductor Devices and IC's","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2006.1666065","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
摘要
在本文中，我们提出了一个模块化和可靠的互补RF LDMOS(横向扩散MOS)架构，完全兼容0.13 μ m CMOS平台。我们证明了N-和PLDMOS晶体管的BVDS*fT值分别高达560和210 ghz。该工艺流程的一个主要优点是，N-和PLDMOS晶体管的漂移区域可以在不影响VT的情况下针对不同的bvds进行独立优化
A Complementary RF-LDMOS Architecture Compatible with 0.13μm CMOS Technology
In this paper, we present a modular and reliable complementary RF LDMOS (laterally diffused MOS) architecture fully compatible with a 0.13 mum CMOS platform. We demonstrate BVDS*fT values up to 560 and 210 GHzV, respectively, for N- and PLDMOS transistors. A major advantage of the proposed process flow is that the drift region of N- and PLDMOS transistors can be independently optimized for different BVDSwithout affecting the VT
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
