{"title":"Two-Carrier Current Saturation in a Lateral Dmos","authors":"J. Lin, P. Hower","doi":"10.1109/ISPSD.2006.1666078","DOIUrl":null,"url":null,"abstract":"Conventional Ldmos transistors suffer from drain current \"compression\" in saturation (gm reduction). When the safe-operating area of the Ldmos is improved by suppressing the parasitic bipolar transistor, an unusual \"expansion\" in the drain characteristic emerges. This new device behavior is described and a mechanism for the \"expansion\" proposed","PeriodicalId":198443,"journal":{"name":"2006 IEEE International Symposium on Power Semiconductor Devices and IC's","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"31","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Symposium on Power Semiconductor Devices and IC's","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2006.1666078","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 31
Abstract
Conventional Ldmos transistors suffer from drain current "compression" in saturation (gm reduction). When the safe-operating area of the Ldmos is improved by suppressing the parasitic bipolar transistor, an unusual "expansion" in the drain characteristic emerges. This new device behavior is described and a mechanism for the "expansion" proposed