1200V Interconnection Technique with Isolated Self-Shielding Structure

1200V interconnection technique with the isolated self-shielding concept was verified by simulation and realized without big process changes from the 600V HVIC process conditions. P-substrate resistivity, p-isolation dose, and interlayer thickness, which relieve the electric field under HV interconnection metal line, are found to be the main factors determining breakdown voltage. Experimental results have shown that over 1200V of breakdown voltage without isolation leakage current can be obtained when the p-substrate resistivity of 200ohm.cm and the p-isolation dose of 8.0e12cm-2 are used