横向Dmos中的双载流子电流饱和

2006 IEEE International Symposium on Power Semiconductor Devices and IC's Pub Date : 2006-06-04 DOI:10.1109/ISPSD.2006.1666078

J. Lin, P. Hower

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引用次数: 31

摘要

传统的Ldmos晶体管在饱和时遭受漏极电流“压缩”(gm降低)。当Ldmos的安全工作区域通过抑制寄生双极晶体管而得到改善时，漏极特性出现了不寻常的“膨胀”。描述了这种新的器件行为，并提出了一种“扩展”机制

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Two-Carrier Current Saturation in a Lateral Dmos

Conventional Ldmos transistors suffer from drain current "compression" in saturation (gm reduction). When the safe-operating area of the Ldmos is improved by suppressing the parasitic bipolar transistor, an unusual "expansion" in the drain characteristic emerges. This new device behavior is described and a mechanism for the "expansion" proposed

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2006 IEEE International Symposium on Power Semiconductor Devices and IC's

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