Integrated Over Voltage Protection Circuits for Power Transistors

F. Alkayal, J. Crebier, C. Schaeffer
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引用次数: 5

Abstract

Nowadays, MOSFET and IGBT power components are widely used in medium and high power converters. They are subjected to increasing requirements: electrical performances, simple implementation, reliability, integration, smaller volume and price. Moreover, their integration process offers the possibility to reduce or eliminate the need for pick and place, bonding (wafer- and/or ball-bonding) and other assembly processes necessary in hybrid assemblies, and in the same time to add some useful functionality like sensors for protection and control. This paper presents an overview of integrated solutions for active over voltage protection circuits. A short state of the art presents the main integrated topologies and compares them. Technological, electrical and thermal compatibilities and interactions are investigated in order to outline what are the benefits but also the limitations of over voltage protection circuit integration. In particular, this analysis tries to evaluate the thermal impact of the protection circuit, which is a dissipative element, on the integrated die and the power switch. Monolithic and hybrid interconnects are also considered in the paper to outline possible benefits from the integration. Several results from simulations but also practice are available in the paper to validate comments and conclusions
功率晶体管集成过压保护电路
目前,MOSFET和IGBT功率元件广泛应用于中、大功率变换器中。它们受到越来越多的要求:电气性能,简单的实施,可靠性,集成度,更小的体积和价格。此外,它们的集成过程提供了减少或消除对拾取和放置,粘合(晶圆和/或球粘合)和混合组件中必要的其他组装过程的需求的可能性,同时增加了一些有用的功能,如用于保护和控制的传感器。本文概述了有源过电压保护电路的集成解决方案。本文简要介绍了主要集成拓扑,并对它们进行了比较。研究了技术、电气和热兼容性和相互作用,以概述过压保护电路集成的优点和局限性。特别是,本分析试图评估保护电路的热影响,这是一个耗散元件,对集成芯片和电源开关。本文还考虑了单片互连和混合互连,以概述集成可能带来的好处。本文给出了几个仿真和实践结果来验证评论和结论
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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