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2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)最新文献

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Electrodeposition of Indium for Low Temperature 3D Stacking 电沉积铟的低温三维堆积
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598451
F. Inoue, Kimoon Park, J. Derakhshandeh, B. Yoo
{"title":"Electrodeposition of Indium for Low Temperature 3D Stacking","authors":"F. Inoue, Kimoon Park, J. Derakhshandeh, B. Yoo","doi":"10.1109/LTB-3D53950.2021.9598451","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598451","url":null,"abstract":"Extensive electrochemical analysis for Indium chloride electrolyte have been executed to make it applicable for fine pitch micro bump application. Indium micro bumps with under bump materials such as Copper, Nickel and Cobalt were fabricated in 20 μm pitch through-resist pattern. There was no defect at the interface between In and UBMs after deposition. The formation kinetics of intermetallic compounds and the interface reaction have also been investigated.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126721278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heat Transport across Interfaces for the Optimization of Heat Sinking in Device Applications 器件应用中优化散热的跨接口热传输
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598428
M. Kuball, J. Pomeroy
{"title":"Heat Transport across Interfaces for the Optimization of Heat Sinking in Device Applications","authors":"M. Kuball, J. Pomeroy","doi":"10.1109/LTB-3D53950.2021.9598428","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598428","url":null,"abstract":"Heterogenous integration of materials and devices opens huge opportunities for exploiting device structures which benefit from an optimal combination of electronic and thermal material properties. It is critically important to assess heat transfer across their interfaces to avoid thermal bottlenecks resulting in excessive device temperatures though. Experimental techniques to assess thermal conductivity of materials and thermal boundary resistance between materials are reviewed, with examples from GaN-on-Diamond, diamond to metal diamond composites.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128519549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomic Diffusion Bonding using AlN films AlN薄膜的原子扩散键合
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598193
M. Uomoto, H. Yoshida, T. Shimatsu, T. Saito, T. Moriwaki, N. Kato, Y. Miyamoto, K. Miyamoto
{"title":"Atomic Diffusion Bonding using AlN films","authors":"M. Uomoto, H. Yoshida, T. Shimatsu, T. Saito, T. Moriwaki, N. Kato, Y. Miyamoto, K. Miyamoto","doi":"10.1109/LTB-3D53950.2021.9598193","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598193","url":null,"abstract":"We demonstrated atomic diffusion bonding (ADB) of wafers using AlN films at room temperature. Results showed that crystal lattice rearrangement occurred at the bonded interface and integrated AlN film with c-axis perpendicular to the film plane formed.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131023942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Progress of diamond substrate development 金刚石衬底研究进展
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598412
Hongxing Wang
{"title":"Progress of diamond substrate development","authors":"Hongxing Wang","doi":"10.1109/LTB-3D53950.2021.9598412","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598412","url":null,"abstract":"Diamond has many excellent properties, such as wide bandgap, high carrier mobility, high breakdown voltage, high thermal conductivity, superior mechanical strength, and chemical stability among the well-known materials. In this talk, large size diamond development and application will be investigated. For heteroepitaxial single crystal diamond growth, preferred orientation Ir (001) film was deposited on sapphire substrate. Then bias enhanced CVD method was used to form diamond nucleation, on which a microwave plasma CVD(MPCVD) system was used to grow single crystal diamond. Then, tungsten atoms were introduced into MPCVD to grow high quality single crystal diamond on this sample. Thereafter, a laser machining technique was used to produce patterned trenches in diamond substrate, on which microchannels were achieved by epitaxial lateral overgrowth of diamond layer by MPCVD. In addition, we studied the enhanced heat spreading due to conduction followed by convective dissipation of a locally heated resistor mimicking a linear hot spot within electronic chips. The combined effect of conductive spreading and convective dissipation exhibited a significant cooling enhancement, which could be useful for GaN/diamond Composite Devices.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120841116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polarization inverted GaN/GaN junctions fabricated by surface-activated bonding 表面活化键合制备极化倒置GaN/GaN结
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598452
K. Sawai, Jianbo Liang, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa
{"title":"Polarization inverted GaN/GaN junctions fabricated by surface-activated bonding","authors":"K. Sawai, Jianbo Liang, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa","doi":"10.1109/LTB-3D53950.2021.9598452","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598452","url":null,"abstract":"We fabricate polarization-inverted GaN/GaN junctions by directly bonding freestanding GaN (0001) substrates to each other. The conventional surface activated bonding process is used. A ~1-nm defect layer is observed at the as-bonded Ga-face/Ga-face interface using transmission electron microscopy.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132903563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Direct bonding of polycrystalline diamond substrate onto Si wafer under atmospheric conditions 常压条件下多晶金刚石衬底与硅片的直接键合
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598377
T. Matsumae, Y. Kurashima, H. Takagi, H. Umezawa, E. Higurashi
{"title":"Direct bonding of polycrystalline diamond substrate onto Si wafer under atmospheric conditions","authors":"T. Matsumae, Y. Kurashima, H. Takagi, H. Umezawa, E. Higurashi","doi":"10.1109/LTB-3D53950.2021.9598377","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598377","url":null,"abstract":"A polycrystalline diamond substrate treated with a mixture of NH3 and H2O2 was directly bonded with a plasma-activated Si wafer. They formed atomic bonds by annealing at 250 °C after contacting surfaces in atmospheric air. The bonding method would contribute to the future large-scale integration of diamond heat spreaders with electronics.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123995395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaN-HEMTs on Diamond Prepared by Room-Temperature Bonding Technology 室温键合技术制备金刚石表面GaN-HEMTs
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598420
S. Hiza, Y. Shirayanagi, Y. Takiguchi, K. Nishimura, T. Matsumae, Y. Kurashima, E. Higurashi, H. Takagi, A. Chayahara, Y. Mokuno, H. Yamada, K. Kasamura, H. Toyoda, A. Kubota, M. Yamamuka
{"title":"GaN-HEMTs on Diamond Prepared by Room-Temperature Bonding Technology","authors":"S. Hiza, Y. Shirayanagi, Y. Takiguchi, K. Nishimura, T. Matsumae, Y. Kurashima, E. Higurashi, H. Takagi, A. Chayahara, Y. Mokuno, H. Yamada, K. Kasamura, H. Toyoda, A. Kubota, M. Yamamuka","doi":"10.1109/LTB-3D53950.2021.9598420","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598420","url":null,"abstract":"GaN-on-Diamond high electron mobility transistors were successfully fabricated by surface-activated room-temperature bonding technique. Various diamond substrates were finely polished and bonded to GaN-HEMTs by surface-activated room-temperature bonding. Fabricated devices showed superior characteristics in thermal dissipation compared to the device with conventional structure.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124224361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Nanostructural Analysis of Al/β-Ga2O3 Interface Fabricated Using Surface Activated Bonding 表面活化键合制备Al/β-Ga2O3界面的纳米结构分析
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598385
Zexin Wan, Jianbo Liang, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa
{"title":"Nanostructural Analysis of Al/β-Ga2O3 Interface Fabricated Using Surface Activated Bonding","authors":"Zexin Wan, Jianbo Liang, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa","doi":"10.1109/LTB-3D53950.2021.9598385","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598385","url":null,"abstract":"5-μm Al films are bonded to β-Ga2O3 (−201) substrates using surface activated bonding. The nanostructural properties of as-bonded interfaces are examined using transmission electron microscopy and energy dispersive X-ray spectroscopy. 5-nm intermediate layers, which are likely to be due to the surface activation process, are observed.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126554834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Uniform resist film on chip substrate prepared by bonding film coated on sheet 通过涂覆在薄片上的粘接膜，在芯片基片上制备均匀的抗蚀膜
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598390
Tomoya Onuki, Shigenori Saito, M. Sasaki
{"title":"Uniform resist film on chip substrate prepared by bonding film coated on sheet","authors":"Tomoya Onuki, Shigenori Saito, M. Sasaki","doi":"10.1109/LTB-3D53950.2021.9598390","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598390","url":null,"abstract":"A new method of bonding the solid photoresist film is proposed for improving the thickness uniformity on the chip substrate. The water-soluble polymer supports the resist film and is dissolved before patterning. The chip area can be used up to the edge. The resist thickness demonstrated is 1.73 μm +/−1.2% in maximum deviation.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130671217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation on Low-temperature Temporary Bonding for Microfluidic Devices in Lifescience Applications 低温临时键合微流控器件在生命科学中的应用研究
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598407
Yang Han, C. Dang, Evert Visker, J. Visker, Aurelie Humbertv, Lan Peng
{"title":"Investigation on Low-temperature Temporary Bonding for Microfluidic Devices in Lifescience Applications","authors":"Yang Han, C. Dang, Evert Visker, J. Visker, Aurelie Humbertv, Lan Peng","doi":"10.1109/LTB-3D53950.2021.9598407","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598407","url":null,"abstract":"This study investigates the effect of low-temperature temporary bonding on thickness uniformity, back grinding, and glue removal after debonding. 140 °C proves to be compatible with backside processes and effectively facilitates glue removal for microfluidic devices used in lifescience applications.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124773158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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