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2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)最新文献

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The unique properties of SiCN as bonding material for hybrid bonding SiCN作为杂化键合材料的独特性能
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598192
S. Iacovo, Soon-Wook Kim, F. Nagano, Lan Peng, F. Inoue, A. Phommahaxay, E. Beyne
{"title":"The unique properties of SiCN as bonding material for hybrid bonding","authors":"S. Iacovo, Soon-Wook Kim, F. Nagano, Lan Peng, F. Inoue, A. Phommahaxay, E. Beyne","doi":"10.1109/LTB-3D53950.2021.9598192","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598192","url":null,"abstract":"Direct Cu-SiCN hybrid bonding is successfully realized by using a thermal budget of 250 °C. The excellent results should be attributed to the tight control on the different processing steps but also to the properties of the SiCN dielectric used as bonding material.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116623298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Fabrication of InP/SiC structure using surface activated direct bonding 表面活化直接键合制备InP/SiC结构
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598366
Y. Fan, T. Maekawa, K. Watanabe, R. Takigawa
{"title":"Fabrication of InP/SiC structure using surface activated direct bonding","authors":"Y. Fan, T. Maekawa, K. Watanabe, R. Takigawa","doi":"10.1109/LTB-3D53950.2021.9598366","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598366","url":null,"abstract":"Bonding of Indium phosphide (InP)-based electronic device and Silicon Carbide (SiC) heat spreader is beneficial to thermal management. In this study, InP/SiC structure was demonstrated using surface activated direct bonding at room temperature. The bond quality was evaluated by dicing testing and tensile testing.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116189645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Surface Contamination Effects on Bonding Performance in Atomic Diffusion Bonding of Wafers using Amorphous Si Thin Films 非晶硅薄膜原子扩散键合中表面污染对键合性能的影响
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598433
T. Amino, M. Uomoto, T. Shimatsu
{"title":"Surface Contamination Effects on Bonding Performance in Atomic Diffusion Bonding of Wafers using Amorphous Si Thin Films","authors":"T. Amino, M. Uomoto, T. Shimatsu","doi":"10.1109/LTB-3D53950.2021.9598433","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598433","url":null,"abstract":"Room-temperature bonding using 20-nm thick amorphous Si films was studied as a function of waiting time t<inf>w</inf> in vacuum of 1.0 × 10<sup>−6</sup> Pa between film deposition and bonding. Bonding strength decreased suddenly at t<inf>w</inf> greater than 3.6 × 10<sup>3</sup> s, which differed from behavior observed using Ti films.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122851024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of Ga2O3/Si direct bonding interface for high power device applications 大功率器件用Ga2O3/Si直接键合界面的制备
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598435
Jianbo Liang, Daiki Takatsuki, Y. Shimizu, M. Higashiwaki, Y. Ohno, Y. Nagai, N. Shigekawa
{"title":"Fabrication of Ga2O3/Si direct bonding interface for high power device applications","authors":"Jianbo Liang, Daiki Takatsuki, Y. Shimizu, M. Higashiwaki, Y. Ohno, Y. Nagai, N. Shigekawa","doi":"10.1109/LTB-3D53950.2021.9598435","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598435","url":null,"abstract":"The fabrication of Ga<inf>2</inf>O<inf>3</inf>(010)/Si(100) and Ga<inf>2</inf>O<inf>3</inf>(001)/Si(100) interfaces is achieved by the surface-activated bonding (SAB) of Ga<inf>2</inf>O<inf>3</inf> and Si substrates. The structure of the bonding interfaces is characterized by transmission electron microscope (TEM).","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123191956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hydrophilic bonding of SiC substrate dipped in hydrofluoric acid with Ga2O3 film through atomically thin intermediate layer 氢氟酸浸SiC衬底与Ga2O3薄膜通过原子薄中间层亲水性键合
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598371
T. Matsumae, Y. Kurashima, H. Takagi, H. Umezawa, E. Higurashi
{"title":"Hydrophilic bonding of SiC substrate dipped in hydrofluoric acid with Ga2O3 film through atomically thin intermediate layer","authors":"T. Matsumae, Y. Kurashima, H. Takagi, H. Umezawa, E. Higurashi","doi":"10.1109/LTB-3D53950.2021.9598371","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598371","url":null,"abstract":"SiC and Ga2O3 surfaces were directly bonded by hydrophilic bonding with an ~0.7-nm-thick intermediate layer. The SiC surface was - OH-terminated with hydrofluoric acid, instead of conventional oxidizing treatment, to minimize the formation of the intermediate layer. This would contribute to efficient heat disspation across bonding interface.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114163296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chip-to-Chip/Wafer Three-Dimensional Integration of 2.5 mm-sized Neuron and Memory Chips by Via-Last Approach 采用Via-Last方法实现2.5 mm大小神经元和存储芯片的片对片/晶圆三维集成
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598372
M. Murugesan, H. Hashimoto, J. Bea, M. Koyanagi, T. Fukushima
{"title":"Chip-to-Chip/Wafer Three-Dimensional Integration of 2.5 mm-sized Neuron and Memory Chips by Via-Last Approach","authors":"M. Murugesan, H. Hashimoto, J. Bea, M. Koyanagi, T. Fukushima","doi":"10.1109/LTB-3D53950.2021.9598372","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598372","url":null,"abstract":"A low thermal budget (≤ 250 °C) chip-to-chip and chip-to-wafer three-dimensional (3D) integration of application-specific smaller artificial intelligence (AI) chips (2.5 mm × 2.5 mm) with 6 level metal (M#) layers were carried out by using TSV (Through – Si - Via) - last method. Several back-end-of-line processes were carefully optimized, such as multi-die thinning, M1 revealing, protection of revealed M1 during TSV metallization, die-level Cu-chemical mechanical polishing for re-distribution layer formation, and μ-bumping were carefully optimized. The diode parameter evaluation for the chips before and after 3D-integration revealed the successful fabrication of AI module for specific applications.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127006191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Surface preparation of metal films by gas cluster ion beams using organic acid vapor for wafer bonding 用气团离子束用有机酸蒸气键合金属薄膜的表面制备
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598403
S. Hanahara, N. Toyoda
{"title":"Surface preparation of metal films by gas cluster ion beams using organic acid vapor for wafer bonding","authors":"S. Hanahara, N. Toyoda","doi":"10.1109/LTB-3D53950.2021.9598403","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598403","url":null,"abstract":"Low temperature bodings of Cu by gas cluster ion beam (GCIB) irradiations with organic acid vapor were studied. GCIBs induce surface smoothing and enhancement of surface reactions without severe damage. Therefore, it is promising for the surface activated bonding (SAB). In this study, organic acid vapor is introduced during GCIB irradiation in order to assist surface oxide removal on metal films (such as Cu, Ni). From XPS study, NiO layer was selectively removed by reaction with adsorbed organic acid. Preliminary bonding experiment using this technique shows promising result for Cu-Cu bonding.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128137647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bonding Position Accuracy of Direct Transfer Bonding, Chip-on-wafer Bonding for III-V/Si Heterogeneous Integration III-V/Si异质集成中直接转移键合的键合位置精度
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598370
Hiromu Onodera, T. Kikuchi, Y. Ohiso, T. Amemiya, N. Nishiyama
{"title":"Bonding Position Accuracy of Direct Transfer Bonding, Chip-on-wafer Bonding for III-V/Si Heterogeneous Integration","authors":"Hiromu Onodera, T. Kikuchi, Y. Ohiso, T. Amemiya, N. Nishiyama","doi":"10.1109/LTB-3D53950.2021.9598370","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598370","url":null,"abstract":"Bonding position accuracy of InP/Si direct transfer bonding for heterogeneous integration were investigated. It was revealed that large difference of coordinate misalignment between X and Y directions exists and this may be strongly related to the tension of adhesive sheet.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133464293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simplified vacuum packaging process by gas gettering using the Au/Ta/Ti metal bonding layer 采用Au/Ta/Ti金属键合层气相吸进简化真空封装工艺
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598438
S. Kariya, T. Matsumae, Y. Kurashima, H. Takagi, M. Hayase, E. Higurashi
{"title":"Simplified vacuum packaging process by gas gettering using the Au/Ta/Ti metal bonding layer","authors":"S. Kariya, T. Matsumae, Y. Kurashima, H. Takagi, M. Hayase, E. Higurashi","doi":"10.1109/LTB-3D53950.2021.9598438","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598438","url":null,"abstract":"Au/Ta/Ti metal multilayer was developed for the improved vacuum packaging process. Wafer-level packaging after degas at 200 °C and absorbing gas molecules at 300 °C were successfully demonstrated using this multilayer. The activation temperature for gas gettering was lower than that of previous studies using the Au/Pt/Ti layer.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130067499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of Ga2O3/3C-SiC direct bonding for efficient surface heat dissipation 高效表面散热的Ga2O3/3C-SiC直接键合制备
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598380
H. Nagai, K. Kawamura, Y. Sakaida, Hiroki Uratani, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa, Jianbo Liang
{"title":"Fabrication of Ga2O3/3C-SiC direct bonding for efficient surface heat dissipation","authors":"H. Nagai, K. Kawamura, Y. Sakaida, Hiroki Uratani, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa, Jianbo Liang","doi":"10.1109/LTB-3D53950.2021.9598380","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598380","url":null,"abstract":"We successfully fabricate a Ga<inf>2</inf>O<inf>3</inf>/3C-SiC direct bonding by the surface-activated bonding (SAB) of 3C-SiC epitaxial layer grown on Si substrate to Ga<inf>2</inf>O<inf>3</inf> substrate. The structure of bonding interface will be investigated by transmission electron microscope (TEM).","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130852470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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