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2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)最新文献

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Structural analysis of diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature 室温下表面活化键合制备金刚石/硅异质界面的结构分析
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598382
Y. Ohno, Jianbo Liang, H. Yoshida, Y. Shimizu, Y. Nagai, N. Shigekawa
{"title":"Structural analysis of diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature","authors":"Y. Ohno, Jianbo Liang, H. Yoshida, Y. Shimizu, Y. Nagai, N. Shigekawa","doi":"10.1109/LTB-3D53950.2021.9598382","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598382","url":null,"abstract":"In diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature, an amorphous layer with carbon and silicon is formed in the bonding process, via atomic intermixing across the interfaces. The layer is crystallized by 1000°C annealing, forming a SiC compound.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115303474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomic Diffusion Bonding using Y2O3 and ZrO2 films Y2O3和ZrO2薄膜的原子扩散键合
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598449
T. Shimatsu, H. Yoshida, M. Uomoto, T. Saito, T. Moriwaki, N. Kato, Y. Miyamoto, K. Miyamoto
{"title":"Atomic Diffusion Bonding using Y2O3 and ZrO2 films","authors":"T. Shimatsu, H. Yoshida, M. Uomoto, T. Saito, T. Moriwaki, N. Kato, Y. Miyamoto, K. Miyamoto","doi":"10.1109/LTB-3D53950.2021.9598449","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598449","url":null,"abstract":"We demonstrated atomic diffusion bonding (ADB) of wafers at room temperature using Y<inf>2</inf>O<inf>3</inf> and ZrO<inf>2</inf> films. Results showed that bonded interface disappeared perfectly (Y<inf>2</inf>O<inf>3</inf> films) or partially (ZrO<inf>2</inf> film) at room temperature, implying high bonding potential using these oxide films in ADB.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126732224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
LTB-3D 2021 Conference Committee LTB-3D 2021会议委员会
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/ltb-3d53950.2021.9598387
{"title":"LTB-3D 2021 Conference Committee","authors":"","doi":"10.1109/ltb-3d53950.2021.9598387","DOIUrl":"https://doi.org/10.1109/ltb-3d53950.2021.9598387","url":null,"abstract":"","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114387034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Void ripening in Cu-Cu bonds Cu-Cu键中的空洞成熟
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598384
Hung-Che Liu, A. Gusak, K. Tu, Chih Chen
{"title":"Void ripening in Cu-Cu bonds","authors":"Hung-Che Liu, A. Gusak, K. Tu, Chih Chen","doi":"10.1109/LTB-3D53950.2021.9598384","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598384","url":null,"abstract":"Cu-Cu joints have potential in high performance electric product. Although the voids in the bonding interface was observed, there was no report on the size distribution and evolution of voids due to ripening. In this paper, the void size distribution under 200 °C for 30, 60 and 120 min is obtained by a specific direction. The average void diameter is 49 nm, 70 nm, and 96 nm for the joint annealed for 30, 60, and 120 min, respectively. A simple kinetic model of ripening is developed, and the relationship between radius and annealing time is in good agreement with experimental data.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130646553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Coplanar waveguides fabricated by directly bonding metal foils to high-resistivity Si substrates 用金属箔与高电阻率硅衬底直接键合制备共面波导
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598401
Kenya Yonekura, Tasuku Kawamoto, Jianbo Liang, E. Shikoh, K. Maezawa, N. Shigekawa
{"title":"Coplanar waveguides fabricated by directly bonding metal foils to high-resistivity Si substrates","authors":"Kenya Yonekura, Tasuku Kawamoto, Jianbo Liang, E. Shikoh, K. Maezawa, N. Shigekawa","doi":"10.1109/LTB-3D53950.2021.9598401","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598401","url":null,"abstract":"Coplanar waveguides are fabricated by directly bonding 17-μm Al foils to Si substrates with different resistivities. A lower insertion loss is observed for a Si substrate with higher resistivity since the substrate loss is decreased. Calculation using an analytical model shows that the insertion loss increases by reducing the thickness of conductors, which demonstrates the superiority of direct bonding of metal foils for realizing low-loss passive components to be integrated on semiconductor substrates.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114623142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Selective Transfer of Si Thin-Film Microchips for Fluidic Self-Assembly 硅薄膜微芯片在流体自组装中的选择性转移
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598442
Y. Fujita, S. Ishihara, Kosuke Nishigaya, Yuki Nakashima, K. Tanabe
{"title":"Selective Transfer of Si Thin-Film Microchips for Fluidic Self-Assembly","authors":"Y. Fujita, S. Ishihara, Kosuke Nishigaya, Yuki Nakashima, K. Tanabe","doi":"10.1109/LTB-3D53950.2021.9598442","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598442","url":null,"abstract":"Fluid self-assembly is one of the promising methods for bonding and integrating micron-order optoelectronic devices on semiconductor chips. In this study, we investigated the fluid self-assembly process using an unprecedented Si thin film and quantitatively evaluated the selectivity in integration by introducing a thermal oxide film. In the thin film separation process, good separation performance from the substrate was achieved by performing SiO2 layer etching while applying ultrasonic vibration, and the selectivity in integration could be improved by introducing a thermal oxide film to the receiver substrate.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127786201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomic Diffusion Bonding of Wafers with Oxide Underlayers using Thin Hf Films for Optical Applications 在光学应用中使用Hf薄膜与氧化物衬底的晶圆原子扩散键合
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598448
G. Yonezawa, M. Uomoto, T. Shimatsu
{"title":"Atomic Diffusion Bonding of Wafers with Oxide Underlayers using Thin Hf Films for Optical Applications","authors":"G. Yonezawa, M. Uomoto, T. Shimatsu","doi":"10.1109/LTB-3D53950.2021.9598448","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598448","url":null,"abstract":"Atomic diffusion bonding of wafers with oxide underlayers using Hf films produces an interface with 100% light transmittance and large surface free energy at the bonded interface greater than 2 J/m2, which is useful for optical applications with high photon energy.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126233395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
[Copyright notice] (版权)
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/ltb-3d53950.2021.9598422
{"title":"[Copyright notice]","authors":"","doi":"10.1109/ltb-3d53950.2021.9598422","DOIUrl":"https://doi.org/10.1109/ltb-3d53950.2021.9598422","url":null,"abstract":"","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134052201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multijunction Solar Cells using Bonding Technology with Pd Nanoparticle Array and Adhesive Material 钯纳米粒子阵列与粘接材料结合多结太阳能电池
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598394
K. Makita, Y. Kamikawa, H. Mizuno, R. Oshima, Y. Shoji, S. Ishizuka, T. Sugaya
{"title":"Multijunction Solar Cells using Bonding Technology with Pd Nanoparticle Array and Adhesive Material","authors":"K. Makita, Y. Kamikawa, H. Mizuno, R. Oshima, Y. Shoji, S. Ishizuka, T. Sugaya","doi":"10.1109/LTB-3D53950.2021.9598394","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598394","url":null,"abstract":"We report a unique bonding technology using Pd nanoparticle array and adhesive material for multijunction (MJ) solar cells. The technology, which is modified with our previous “smart stack technology”, expands the possibility of MJ solar cell. In GaAs//CuInGaSe 3-junction solar cell, a record-efficiency of 28.06% was attained.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133455811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication and Characterization of GaN/Diamond bonding interface GaN/金刚石键合界面的制备与表征
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI: 10.1109/LTB-3D53950.2021.9598383
A. Kobayashi, Y. Shimizu, Y. Ohno, S. W. Kim, K. Koyama, M. Kasu, Y. Nagai, N. Shigekawa, J. Liang
{"title":"Fabrication and Characterization of GaN/Diamond bonding interface","authors":"A. Kobayashi, Y. Shimizu, Y. Ohno, S. W. Kim, K. Koyama, M. Kasu, Y. Nagai, N. Shigekawa, J. Liang","doi":"10.1109/LTB-3D53950.2021.9598383","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598383","url":null,"abstract":"Direct bonding of diamond and GaN is successfully fabricated by surface activated bonding method. An 80% contact area of diamond and GaN is obtained. The effect of annealing temperature on the structure properties of the bonding interface is investigated under in-situ annealing in a transmission electron microscope (TEM).","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134505980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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