用金属箔与高电阻率硅衬底直接键合制备共面波导

Kenya Yonekura, Tasuku Kawamoto, Jianbo Liang, E. Shikoh, K. Maezawa, N. Shigekawa
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引用次数: 0

摘要

采用17 μm Al箔与不同电阻率的Si衬底直接键合的方法制备了共面波导。由于衬底损耗降低,因此观察到具有较高电阻率的硅衬底具有较低的插入损耗。利用解析模型计算表明,插入损耗随着导体厚度的减小而增大,说明金属箔直接键合在半导体衬底上实现低损耗无源元件集成的优越性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Coplanar waveguides fabricated by directly bonding metal foils to high-resistivity Si substrates
Coplanar waveguides are fabricated by directly bonding 17-μm Al foils to Si substrates with different resistivities. A lower insertion loss is observed for a Si substrate with higher resistivity since the substrate loss is decreased. Calculation using an analytical model shows that the insertion loss increases by reducing the thickness of conductors, which demonstrates the superiority of direct bonding of metal foils for realizing low-loss passive components to be integrated on semiconductor substrates.
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