室温下表面活化键合制备金刚石/硅异质界面的结构分析

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598382

Y. Ohno, Jianbo Liang, H. Yoshida, Y. Shimizu, Y. Nagai, N. Shigekawa

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引用次数: 0

摘要

在室温下通过表面活化键合制备的金刚石/硅异质界面中，在键合过程中，通过在界面上的原子混合形成了碳和硅的非晶层。该层经1000℃退火结晶，形成SiC化合物。

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Structural analysis of diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature

In diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature, an amorphous layer with carbon and silicon is formed in the bonding process, via atomic intermixing across the interfaces. The layer is crystallized by 1000°C annealing, forming a SiC compound.

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2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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